Hydrogen gettering in annealed oxygen-implanted silicon
Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up to 1570 K, including also processing under enhanced hydrostatic pressure, up...
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| Дата: | 2010 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118217 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Hydrogen gettering in annealed oxygen-implanted silicon/ A. Misiuk, A. Barcz, A. Ulyashin, I.V. Antonova, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 161-165. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118217 |
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dspace |
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irk-123456789-1182172017-05-30T03:03:11Z Hydrogen gettering in annealed oxygen-implanted silicon Misiuk, A. Barcz, A. Ulyashin, A. Antonova, I.V. Prujszczyk, M. Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up to 1570 K, including also processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing conditions, buried layers containing SiO₂₋x clusters and/or precipitates were formed. To produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was accumulated in sub-surface region as well as within implantation-disturbed areas. It has been found that hydrogen was still present in Si:O,H structures formed by oxygen implantation with the dose D = 10⁷ cm⁻² even after post-implantation annealing up to 873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as well as in SOI structures can be used for recognition of defects. 2010 Article Hydrogen gettering in annealed oxygen-implanted silicon/ A. Misiuk, A. Barcz, A. Ulyashin, I.V. Antonova, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 161-165. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 52.40.Hf, 61.05.C-, 68.37.Ps, 82.80.Ms http://dspace.nbuv.gov.ua/handle/123456789/118217 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O
prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was
investigated after annealing of Si:O at temperatures up to 1570 K, including also
processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing
conditions, buried layers containing SiO₂₋x clusters and/or precipitates were formed. To
produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF
hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was
accumulated in sub-surface region as well as within implantation-disturbed areas. It has
been found that hydrogen was still present in Si:O,H structures formed by oxygen
implantation with the dose D = 10⁷ cm⁻² even after post-implantation annealing up to
873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as
well as in SOI structures can be used for recognition of defects. |
| format |
Article |
| author |
Misiuk, A. Barcz, A. Ulyashin, A. Antonova, I.V. Prujszczyk, M. |
| spellingShingle |
Misiuk, A. Barcz, A. Ulyashin, A. Antonova, I.V. Prujszczyk, M. Hydrogen gettering in annealed oxygen-implanted silicon Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Misiuk, A. Barcz, A. Ulyashin, A. Antonova, I.V. Prujszczyk, M. |
| author_sort |
Misiuk, A. |
| title |
Hydrogen gettering in annealed oxygen-implanted silicon |
| title_short |
Hydrogen gettering in annealed oxygen-implanted silicon |
| title_full |
Hydrogen gettering in annealed oxygen-implanted silicon |
| title_fullStr |
Hydrogen gettering in annealed oxygen-implanted silicon |
| title_full_unstemmed |
Hydrogen gettering in annealed oxygen-implanted silicon |
| title_sort |
hydrogen gettering in annealed oxygen-implanted silicon |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118217 |
| citation_txt |
Hydrogen gettering in annealed oxygen-implanted silicon/ A. Misiuk, A. Barcz, A. Ulyashin, I.V. Antonova, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 161-165. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:31:38Z |
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