Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

. Investigated in this work were changes in the concentration of charge carriers ne and their mobilities u, which occur under the influence of thermoannealing of n - Si and n - Ge crystals grown by the Czochralski method. Thermoannealing of n - Si samples was carried out both at 450 °C and 650 °C...

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Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:2012
Автори: Baranskii, P.I., Gaidar, G.P.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118307
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Цитувати:Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 218-222. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1183072017-05-30T03:05:17Z Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity Baranskii, P.I. Gaidar, G.P. . Investigated in this work were changes in the concentration of charge carriers ne and their mobilities u, which occur under the influence of thermoannealing of n - Si and n - Ge crystals grown by the Czochralski method. Thermoannealing of n - Si samples was carried out both at 450 °C and 650 °C. The results of the influence of twostage (combined) thermoannealing have been presented. In the first series of experiments, the annealing was performed at 450 °C with varied duration (from 5 to 45 h) at the beginning, and then it was carried out for 40 hours at 650 °C. The second series of experiments was as follows: the annealing at 450 °C for 45-hour duration, then the annealing at 650 °C, which was carried out for various periods of time (5, 10, 20, 45, 66 hours). The observations for changes of ne and u were carried out both at the temperature 300 and 77 K. It is ascertained that changing the main parameters (ne and u) in n  Ge As heavily doped single crystals, as a result of the series of thermoannealings (duration 30 min in each case) within the temperature range from 540 to 900 °C, is non-monotonous due to transformation of the thermodonors TD - I into TD-II . 2012 Article Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 218-222. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 61.82.Fk http://dspace.nbuv.gov.ua/handle/123456789/118307 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description . Investigated in this work were changes in the concentration of charge carriers ne and their mobilities u, which occur under the influence of thermoannealing of n - Si and n - Ge crystals grown by the Czochralski method. Thermoannealing of n - Si samples was carried out both at 450 °C and 650 °C. The results of the influence of twostage (combined) thermoannealing have been presented. In the first series of experiments, the annealing was performed at 450 °C with varied duration (from 5 to 45 h) at the beginning, and then it was carried out for 40 hours at 650 °C. The second series of experiments was as follows: the annealing at 450 °C for 45-hour duration, then the annealing at 650 °C, which was carried out for various periods of time (5, 10, 20, 45, 66 hours). The observations for changes of ne and u were carried out both at the temperature 300 and 77 K. It is ascertained that changing the main parameters (ne and u) in n  Ge As heavily doped single crystals, as a result of the series of thermoannealings (duration 30 min in each case) within the temperature range from 540 to 900 °C, is non-monotonous due to transformation of the thermodonors TD - I into TD-II .
format Article
author Baranskii, P.I.
Gaidar, G.P.
spellingShingle Baranskii, P.I.
Gaidar, G.P.
Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Baranskii, P.I.
Gaidar, G.P.
author_sort Baranskii, P.I.
title Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
title_short Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
title_full Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
title_fullStr Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
title_full_unstemmed Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
title_sort peculiarities of thermoannealing in n-si and n-ge crystals with oxygen impurity
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2012
url http://dspace.nbuv.gov.ua/handle/123456789/118307
citation_txt Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 218-222. — Бібліогр.: 24 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT baranskiipi peculiaritiesofthermoannealinginnsiandngecrystalswithoxygenimpurity
AT gaidargp peculiaritiesofthermoannealinginnsiandngecrystalswithoxygenimpurity
first_indexed 2023-10-18T20:31:52Z
last_indexed 2023-10-18T20:31:52Z
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