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Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties

Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties

The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light scattering. The most probable size of the nano...

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Main Authors: Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118485
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spelling irk-123456789-1184852017-05-31T03:07:56Z Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties Borblik, V.L. Korchevoi, A.A. Nikolenko, A.S. Strelchuk, V.V. Fonkich, A.M. Shwarts, Yu.M. Shwarts, M.M. The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light scattering. The most probable size of the nanocrystallites forming the films decreases monotonically with decreasing their thickness. Electro conductivity of such the films proves to be high enough (1-10 Ohm·cm at room temperature) and has a character of variable range hopping conduction of Mott’s type. The hops, presumably, take place through the localized states connected with the grain boundaries. 2014 Article Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties / V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 237-242. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 73.63.-b, 81.07.-b http://dspace.nbuv.gov.ua/handle/123456789/118485 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light scattering. The most probable size of the nanocrystallites forming the films decreases monotonically with decreasing their thickness. Electro conductivity of such the films proves to be high enough (1-10 Ohm·cm at room temperature) and has a character of variable range hopping conduction of Mott’s type. The hops, presumably, take place through the localized states connected with the grain boundaries.
format Article
author Borblik, V.L.
Korchevoi, A.A.
Nikolenko, A.S.
Strelchuk, V.V.
Fonkich, A.M.
Shwarts, Yu.M.
Shwarts, M.M.
spellingShingle Borblik, V.L.
Korchevoi, A.A.
Nikolenko, A.S.
Strelchuk, V.V.
Fonkich, A.M.
Shwarts, Yu.M.
Shwarts, M.M.
Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Borblik, V.L.
Korchevoi, A.A.
Nikolenko, A.S.
Strelchuk, V.V.
Fonkich, A.M.
Shwarts, Yu.M.
Shwarts, M.M.
author_sort Borblik, V.L.
title Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
title_short Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
title_full Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
title_fullStr Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
title_full_unstemmed Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
title_sort nanocrystalline ge films created by thermal vacuum deposition on gaas substrates: structural and electric properties
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2014
url http://dspace.nbuv.gov.ua/handle/123456789/118485
citation_txt Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties / V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 237-242. — Бібліогр.: 10 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT borblikvl nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties
AT korchevoiaa nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties
AT nikolenkoas nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties
AT strelchukvv nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties
AT fonkicham nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties
AT shwartsyum nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties
AT shwartsmm nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties
first_indexed 2023-10-18T20:32:10Z
last_indexed 2023-10-18T20:32:10Z
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