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Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light scattering. The most probable size of the nano...
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| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118485 |
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