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Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing
Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiOx film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiOx film. The influence of thermal and laser annealing on SiOx film properties has...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118502 |
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