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Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures
The effect of treatment in saturated acetone vapors on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited SiOx films is studied. As a result of this treatment followed by high-temperature annealing at the temperature 930 °C, considerable PL intensity grow...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118680 |
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