A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
A new analytical method of extraction of a diode series resistance from current-voltage characteristics is proposed which takes into account dependence of the series resistance on voltage (or current). The method supposes a presence of linear section in the diode current-voltage characteristic pl...
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| Дата: | 2009 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118832 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118832 |
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dspace |
| spelling |
irk-123456789-1188322017-06-01T03:06:23Z A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. A new analytical method of extraction of a diode series resistance from current-voltage characteristics is proposed which takes into account dependence of the series resistance on voltage (or current). The method supposes a presence of linear section in the diode current-voltage characteristic plotted in semi-logarithmic scale. This method is applied here to experimental data for silicon diode in which series resistance is caused by freezing-out free current carriers into impurities at cryogenic temperatures. Character of dependence of the base resistance on electric field in the base layer determined in such way confirms hopping nature of silicon conduction under these conditions. 2009 Article A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 71.30.+h, 72.20.Ee, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/118832 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A new analytical method of extraction of a diode series resistance from
current-voltage characteristics is proposed which takes into account dependence of the
series resistance on voltage (or current). The method supposes a presence of linear
section in the diode current-voltage characteristic plotted in semi-logarithmic scale. This
method is applied here to experimental data for silicon diode in which series resistance is
caused by freezing-out free current carriers into impurities at cryogenic temperatures.
Character of dependence of the base resistance on electric field in the base layer
determined in such way confirms hopping nature of silicon conduction under these
conditions. |
| format |
Article |
| author |
Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. |
| spellingShingle |
Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. |
| author_sort |
Borblik, V.L. |
| title |
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base |
| title_short |
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base |
| title_full |
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base |
| title_fullStr |
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base |
| title_full_unstemmed |
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base |
| title_sort |
new method of extraction of a p-n diode series resistance from i-v characteristics and its application to analysis of low-temperature conduction of the diode base |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118832 |
| citation_txt |
A new method of extraction of a p-n diode series resistance
from I-V characteristics and its application to analysis
of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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