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A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

A new analytical method of extraction of a diode series resistance from current-voltage characteristics is proposed which takes into account dependence of the series resistance on voltage (or current). The method supposes a presence of linear section in the diode current-voltage characteristic pl...

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Main Authors: Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118832
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spelling irk-123456789-1188322017-06-01T03:06:23Z A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. A new analytical method of extraction of a diode series resistance from current-voltage characteristics is proposed which takes into account dependence of the series resistance on voltage (or current). The method supposes a presence of linear section in the diode current-voltage characteristic plotted in semi-logarithmic scale. This method is applied here to experimental data for silicon diode in which series resistance is caused by freezing-out free current carriers into impurities at cryogenic temperatures. Character of dependence of the base resistance on electric field in the base layer determined in such way confirms hopping nature of silicon conduction under these conditions. 2009 Article A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 71.30.+h, 72.20.Ee, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/118832 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A new analytical method of extraction of a diode series resistance from current-voltage characteristics is proposed which takes into account dependence of the series resistance on voltage (or current). The method supposes a presence of linear section in the diode current-voltage characteristic plotted in semi-logarithmic scale. This method is applied here to experimental data for silicon diode in which series resistance is caused by freezing-out free current carriers into impurities at cryogenic temperatures. Character of dependence of the base resistance on electric field in the base layer determined in such way confirms hopping nature of silicon conduction under these conditions.
format Article
author Borblik, V.L.
Shwarts, Yu.M.
Shwarts, M.M.
spellingShingle Borblik, V.L.
Shwarts, Yu.M.
Shwarts, M.M.
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Borblik, V.L.
Shwarts, Yu.M.
Shwarts, M.M.
author_sort Borblik, V.L.
title A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
title_short A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
title_full A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
title_fullStr A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
title_full_unstemmed A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
title_sort new method of extraction of a p-n diode series resistance from i-v characteristics and its application to analysis of low-temperature conduction of the diode base
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2009
url http://dspace.nbuv.gov.ua/handle/123456789/118832
citation_txt A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:33:06Z
last_indexed 2023-10-18T20:33:06Z
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