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Increase of planar homogeneity of multi-silicon structures by gettering treatments

Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high degree of homogeneity in LD distribution over the sample surface and cleaning of t...

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Main Authors: Litovchenko, V.G., Efremov, A.A., Evtukh, A.A., Rassamakin, Yu.V., Klyui, M.I., Kostylov, V.P.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119249
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spelling irk-123456789-1192492017-06-06T03:04:30Z Increase of planar homogeneity of multi-silicon structures by gettering treatments Litovchenko, V.G. Efremov, A.A. Evtukh, A.A. Rassamakin, Yu.V. Klyui, M.I. Kostylov, V.P. Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high degree of homogeneity in LD distribution over the sample surface and cleaning of the samples from recombination active impurities are achieved. Possible mechanisms of the homogenization are briefly discussed. 2001 Article Increase of planar homogeneity of multi-silicon structures by gettering treatments / V.G. Litovchenko, A.A. Efremov, A.A. Evtukh, Yu.V. Rassamakin, M.I. Klyui, V.P. Kostylov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 82-84. — Бібліогр.: 1 назв. — англ. 1560-8034 PACS: 61.72.Y; 72.40; 81.05.C; 81.65.T http://dspace.nbuv.gov.ua/handle/123456789/119249 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high degree of homogeneity in LD distribution over the sample surface and cleaning of the samples from recombination active impurities are achieved. Possible mechanisms of the homogenization are briefly discussed.
format Article
author Litovchenko, V.G.
Efremov, A.A.
Evtukh, A.A.
Rassamakin, Yu.V.
Klyui, M.I.
Kostylov, V.P.
spellingShingle Litovchenko, V.G.
Efremov, A.A.
Evtukh, A.A.
Rassamakin, Yu.V.
Klyui, M.I.
Kostylov, V.P.
Increase of planar homogeneity of multi-silicon structures by gettering treatments
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Litovchenko, V.G.
Efremov, A.A.
Evtukh, A.A.
Rassamakin, Yu.V.
Klyui, M.I.
Kostylov, V.P.
author_sort Litovchenko, V.G.
title Increase of planar homogeneity of multi-silicon structures by gettering treatments
title_short Increase of planar homogeneity of multi-silicon structures by gettering treatments
title_full Increase of planar homogeneity of multi-silicon structures by gettering treatments
title_fullStr Increase of planar homogeneity of multi-silicon structures by gettering treatments
title_full_unstemmed Increase of planar homogeneity of multi-silicon structures by gettering treatments
title_sort increase of planar homogeneity of multi-silicon structures by gettering treatments
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2001
url http://dspace.nbuv.gov.ua/handle/123456789/119249
citation_txt Increase of planar homogeneity of multi-silicon structures by gettering treatments / V.G. Litovchenko, A.A. Efremov, A.A. Evtukh, Yu.V. Rassamakin, M.I. Klyui, V.P. Kostylov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 82-84. — Бібліогр.: 1 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:34:07Z
last_indexed 2023-10-18T20:34:07Z
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