Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide
Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of oxygen promotes taking a vacancy stream aside from a doping impurity of phosph...
Збережено в:
| Дата: | 2001 |
|---|---|
| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119250 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide / P.G. Litovchenko, W. Wahl, A.A. Groza, A.P. Dolgolenko, A.Ya. Karpenko, V.I. Khivrych, O.P. Litovchenko, V.F. Lastovetsky, V.I. Sugakov, V.K. Dubovy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 85-90. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119250 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1192502017-06-06T03:02:39Z Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide Litovchenko, P.G. Wahl, W. Groza, A.A. Dolgolenko, A.P. Karpenko, A.Ya. Khivrych, V.I. Litovchenko, O.P. Lastovetsky, V.F. Sugakov1, V.I. Dubovy, V.K. Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of oxygen promotes taking a vacancy stream aside from a doping impurity of phosphorus. Thus, in spite of the greater capture radius of vacancies by phosphorus atoms, high concentration of oxygen will suppress formation of E-centres. Use of neutron transmutation doping method allows to receive silicon with enhanced radiation hardness. The preliminary irradiation with neutrons or charged particles with subsequent annealing also allows to increase radiation hardness of material. It is due to introduction into the volume of material some additional sinks for primary radiation defects that causes enhanced radiation hardness of such material. 2001 Article Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide / P.G. Litovchenko, W. Wahl, A.A. Groza, A.P. Dolgolenko, A.Ya. Karpenko, V.I. Khivrych, O.P. Litovchenko, V.F. Lastovetsky, V.I. Sugakov, V.K. Dubovy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 85-90. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 29.40.W; 61.72; 61.82.F; 71.55.A; 78.66 http://dspace.nbuv.gov.ua/handle/123456789/119250 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of oxygen promotes taking a vacancy stream aside from a doping impurity of phosphorus. Thus, in spite of the greater capture radius of vacancies by phosphorus atoms, high concentration of oxygen will suppress formation of E-centres. Use of neutron transmutation doping method allows to receive silicon with enhanced radiation hardness. The preliminary irradiation with neutrons or charged particles with subsequent annealing also allows to increase radiation hardness of material. It is due to introduction into the volume of material some additional sinks for primary radiation defects that causes enhanced radiation hardness of such material. |
| format |
Article |
| author |
Litovchenko, P.G. Wahl, W. Groza, A.A. Dolgolenko, A.P. Karpenko, A.Ya. Khivrych, V.I. Litovchenko, O.P. Lastovetsky, V.F. Sugakov1, V.I. Dubovy, V.K. |
| spellingShingle |
Litovchenko, P.G. Wahl, W. Groza, A.A. Dolgolenko, A.P. Karpenko, A.Ya. Khivrych, V.I. Litovchenko, O.P. Lastovetsky, V.F. Sugakov1, V.I. Dubovy, V.K. Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Litovchenko, P.G. Wahl, W. Groza, A.A. Dolgolenko, A.P. Karpenko, A.Ya. Khivrych, V.I. Litovchenko, O.P. Lastovetsky, V.F. Sugakov1, V.I. Dubovy, V.K. |
| author_sort |
Litovchenko, P.G. |
| title |
Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| title_short |
Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| title_full |
Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| title_fullStr |
Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| title_full_unstemmed |
Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| title_sort |
influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119250 |
| citation_txt |
Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide / P.G. Litovchenko, W. Wahl, A.A. Groza, A.P. Dolgolenko, A.Ya. Karpenko, V.I. Khivrych, O.P. Litovchenko, V.F. Lastovetsky, V.I. Sugakov, V.K. Dubovy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 85-90. — Бібліогр.: 16 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT litovchenkopg influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide AT wahlw influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide AT grozaaa influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide AT dolgolenkoap influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide AT karpenkoaya influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide AT khivrychvi influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide AT litovchenkoop influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide AT lastovetskyvf influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide AT sugakov1vi influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide AT dubovyvk influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide |
| first_indexed |
2023-10-18T20:34:07Z |
| last_indexed |
2023-10-18T20:34:07Z |
| _version_ |
1796150542585561088 |