Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems

The influence of Pt on solid state reactions in Ni (30 nm)/Pt(x) /Siep.(50 nm)/ Si (001) (x=2 nm, 6 nm) nanodimensional films has been investigated. The layers of Pt and Ni were produced by magnetron sputtering technique on the epitaxially grown 50 nm Si layer on the top of the monocryst...

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Бібліографічні деталі
Дата:	2013
Автори:	Makogon, Iu.N., Pavlova, E.P., Sidorenko, S.I., Beddies, G., Beke, D.L., Csik, A., Verbitska, T.I., Fihurna, E.V., Shkarban, R.A.
Формат:	Стаття
Мова:	English
Опубліковано:	НТК «Інститут монокристалів» НАН України 2013
Назва видання:	Functional Materials
Теми:	Characterization and properties
Онлайн доступ:	http://dspace.nbuv.gov.ua/handle/123456789/120090
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Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:	Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems / Iu.N. Makogon, E.P. Pavlova, S.I. Sidorenko, G. Beddies, D.L. Beke, A. Csik, T.I. Verbitska, E.V. Figurhaya, R.A. Shkarban // Functional Materials. — 2013. — Т. 20, № 3. — С. 332-339. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

id	irk-123456789-120090
record_format	dspace
spelling	irk-123456789-1200902017-06-12T03:03:49Z Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems Makogon, Iu.N. Pavlova, E.P. Sidorenko, S.I. Beddies, G. Beke, D.L. Csik, A. Verbitska, T.I. Fihurna, E.V. Shkarban, R.A. Characterization and properties The influence of Pt on solid state reactions in Ni (30 nm)/Pt(x) /Siep.(50 nm)/ Si (001) (x=2 nm, 6 nm) nanodimensional films has been investigated. The layers of Pt and Ni were produced by magnetron sputtering technique on the epitaxially grown 50 nm Si layer on the top of the monocrystalline Si (001) substrate at the room temperature. Isochronal rapid thermal annealing of the samples was carried out in nitrogen atmosphere for 30 s in (450—900)° C temperature range. In the as-deposited films no phase formations were observed. During heat treatments thermally activated solid state reactions began by formation of intermediate silicide phase of Ni₂Si for x=2 nm, but the formation of this Ni reach phase was hindered for x=6 nm. Increasing the annealing temperature up to 600° C, independently from the thickness of the intermediate Pt layer, NiSi , PtSi compounds as well as Ni₁₋xPtxSi solid solution have been formed. Two-layered heterostructure has been observed for x=6 nm: complex polycrystalline Ni₁₋xPtxSi phase formed close to the surface, below which the NiSi phase was situated. Decomposition of Ni₁₋xPtxSi silicide to the NiSi (and PtSi ) phases was observed after annealing above 650° C and 850° C. Si enrichment at the surface of the Ni₁₋xPtxSi , NiSi and NiSi₂ phases is clearly observed on secondary neutral mass spectrometry depth profiles, which is interpreted as a consequence of the fast diffusion of Si along the grain boundaries. 2013 Article Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems / Iu.N. Makogon, E.P. Pavlova, S.I. Sidorenko, G. Beddies, D.L. Beke, A. Csik, T.I. Verbitska, E.V. Figurhaya, R.A. Shkarban // Functional Materials. — 2013. — Т. 20, № 3. — С. 332-339. — Бібліогр.: 17 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.03.332 http://dspace.nbuv.gov.ua/handle/123456789/120090 en Functional Materials НТК «Інститут монокристалів» НАН України
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
language	English
topic	Characterization and properties Characterization and properties
spellingShingle	Characterization and properties Characterization and properties Makogon, Iu.N. Pavlova, E.P. Sidorenko, S.I. Beddies, G. Beke, D.L. Csik, A. Verbitska, T.I. Fihurna, E.V. Shkarban, R.A. Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems Functional Materials
description	The influence of Pt on solid state reactions in Ni (30 nm)/Pt(x) /Siep.(50 nm)/ Si (001) (x=2 nm, 6 nm) nanodimensional films has been investigated. The layers of Pt and Ni were produced by magnetron sputtering technique on the epitaxially grown 50 nm Si layer on the top of the monocrystalline Si (001) substrate at the room temperature. Isochronal rapid thermal annealing of the samples was carried out in nitrogen atmosphere for 30 s in (450—900)° C temperature range. In the as-deposited films no phase formations were observed. During heat treatments thermally activated solid state reactions began by formation of intermediate silicide phase of Ni₂Si for x=2 nm, but the formation of this Ni reach phase was hindered for x=6 nm. Increasing the annealing temperature up to 600° C, independently from the thickness of the intermediate Pt layer, NiSi , PtSi compounds as well as Ni₁₋xPtxSi solid solution have been formed. Two-layered heterostructure has been observed for x=6 nm: complex polycrystalline Ni₁₋xPtxSi phase formed close to the surface, below which the NiSi phase was situated. Decomposition of Ni₁₋xPtxSi silicide to the NiSi (and PtSi ) phases was observed after annealing above 650° C and 850° C. Si enrichment at the surface of the Ni₁₋xPtxSi , NiSi and NiSi₂ phases is clearly observed on secondary neutral mass spectrometry depth profiles, which is interpreted as a consequence of the fast diffusion of Si along the grain boundaries.
format	Article
author	Makogon, Iu.N. Pavlova, E.P. Sidorenko, S.I. Beddies, G. Beke, D.L. Csik, A. Verbitska, T.I. Fihurna, E.V. Shkarban, R.A.
author_facet	Makogon, Iu.N. Pavlova, E.P. Sidorenko, S.I. Beddies, G. Beke, D.L. Csik, A. Verbitska, T.I. Fihurna, E.V. Shkarban, R.A.
author_sort	Makogon, Iu.N.
title	Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
title_short	Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
title_full	Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
title_fullStr	Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
title_full_unstemmed	Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
title_sort	formation and thermal stability of nisi phase in ni (30 nm)/pt (2 nm; 6 nm)/siep. (50 nm)/si (001) thin film systems
publisher	НТК «Інститут монокристалів» НАН України
publishDate	2013
topic_facet	Characterization and properties
url	http://dspace.nbuv.gov.ua/handle/123456789/120090
citation_txt	Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems / Iu.N. Makogon, E.P. Pavlova, S.I. Sidorenko, G. Beddies, D.L. Beke, A. Csik, T.I. Verbitska, E.V. Figurhaya, R.A. Shkarban // Functional Materials. — 2013. — Т. 20, № 3. — С. 332-339. — Бібліогр.: 17 назв. — англ.
series	Functional Materials
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first_indexed	2023-10-18T20:36:11Z
last_indexed	2023-10-18T20:36:11Z
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Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems

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