Ultrasound effect on radiation damages in boron implanted silicon
The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-a...
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| Дата: | 2000 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120227 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-120227 |
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dspace |
| spelling |
irk-123456789-1202272017-06-12T03:04:58Z Ultrasound effect on radiation damages in boron implanted silicon Romanjuk, B. Krüger, D. Melnik, V. Popov, V. Olikh, Ya. Soroka, V. Oberemok, O. The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed. 2000 Article Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 61.72T; 66.30L; 61.72 http://dspace.nbuv.gov.ua/handle/123456789/120227 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed. |
| format |
Article |
| author |
Romanjuk, B. Krüger, D. Melnik, V. Popov, V. Olikh, Ya. Soroka, V. Oberemok, O. |
| spellingShingle |
Romanjuk, B. Krüger, D. Melnik, V. Popov, V. Olikh, Ya. Soroka, V. Oberemok, O. Ultrasound effect on radiation damages in boron implanted silicon Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Romanjuk, B. Krüger, D. Melnik, V. Popov, V. Olikh, Ya. Soroka, V. Oberemok, O. |
| author_sort |
Romanjuk, B. |
| title |
Ultrasound effect on radiation damages in boron implanted silicon |
| title_short |
Ultrasound effect on radiation damages in boron implanted silicon |
| title_full |
Ultrasound effect on radiation damages in boron implanted silicon |
| title_fullStr |
Ultrasound effect on radiation damages in boron implanted silicon |
| title_full_unstemmed |
Ultrasound effect on radiation damages in boron implanted silicon |
| title_sort |
ultrasound effect on radiation damages in boron implanted silicon |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120227 |
| citation_txt |
Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT romanjukb ultrasoundeffectonradiationdamagesinboronimplantedsilicon AT krugerd ultrasoundeffectonradiationdamagesinboronimplantedsilicon AT melnikv ultrasoundeffectonradiationdamagesinboronimplantedsilicon AT popovv ultrasoundeffectonradiationdamagesinboronimplantedsilicon AT olikhya ultrasoundeffectonradiationdamagesinboronimplantedsilicon AT sorokav ultrasoundeffectonradiationdamagesinboronimplantedsilicon AT oberemoko ultrasoundeffectonradiationdamagesinboronimplantedsilicon |
| first_indexed |
2023-10-18T20:36:33Z |
| last_indexed |
2023-10-18T20:36:33Z |
| _version_ |
1796150649653559296 |