Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures
We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and elect...
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| Дата: | 2000 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121164 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures / Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 400-405. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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dspace |
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irk-123456789-1211642017-06-14T03:04:07Z Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and electric field dependencies enabled us to explain the features in structure thermometric characteristics. It is shown that both height and position of the responsivity peak depend on the extent to which the hopping conductivity is non-ohmic. They are essentially determined by the density of states near the Fermi level. 2000 Article Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures / Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 400-405. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 07.07.D, 07.20.D, 61.72.T, 85.30 http://dspace.nbuv.gov.ua/handle/123456789/121164 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and electric field dependencies enabled us to explain the features in structure thermometric characteristics. It is shown that both height and position of the responsivity peak depend on the extent to which the hopping conductivity is non-ohmic. They are essentially determined by the density of states near the Fermi level. |
| format |
Article |
| author |
Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. |
| spellingShingle |
Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. |
| author_sort |
Shwarts, Yu.M. |
| title |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_short |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_full |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_fullStr |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_full_unstemmed |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_sort |
non-ohmic mott conductivity and thermometric characteristics of heavily doped silicon structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121164 |
| citation_txt |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures / Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 400-405. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:38:47Z |
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