Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing
For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General regularities of both radiation absorption and sample heating are considered...
Збережено в:
| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2000 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121170 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Цитувати: | Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing / O.A. Agueev, A.M. Svetlichny, S.I. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 379-382. — Бібліогр.: 15 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121170 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1211702017-06-14T03:04:47Z Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing Agueev, O.A. Svetlichny, A.M. Soloviev, S.I. For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General regularities of both radiation absorption and sample heating are considered. We evaluated various processing modes; one should take this into account when developing technological procedures based on rapid thermal processing for SiC. 2000 Article Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing / O.A. Agueev, A.M. Svetlichny, S.I. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 379-382. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 42.25.B, 77.84.B, 78.20.C http://dspace.nbuv.gov.ua/handle/123456789/121170 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General regularities of both radiation absorption and sample heating are considered. We evaluated various processing modes; one should take this into account when developing technological procedures based on rapid thermal processing for SiC. |
| format |
Article |
| author |
Agueev, O.A. Svetlichny, A.M. Soloviev, S.I. |
| spellingShingle |
Agueev, O.A. Svetlichny, A.M. Soloviev, S.I. Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Agueev, O.A. Svetlichny, A.M. Soloviev, S.I. |
| author_sort |
Agueev, O.A. |
| title |
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing |
| title_short |
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing |
| title_full |
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing |
| title_fullStr |
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing |
| title_full_unstemmed |
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing |
| title_sort |
simulation of incoherent radiation absorption in 3c-, 6h- and 4h-sic at rapid thermal processing |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121170 |
| citation_txt |
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing / O.A. Agueev, A.M. Svetlichny, S.I. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 379-382. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT agueevoa simulationofincoherentradiationabsorptionin3c6hand4hsicatrapidthermalprocessing AT svetlichnyam simulationofincoherentradiationabsorptionin3c6hand4hsicatrapidthermalprocessing AT solovievsi simulationofincoherentradiationabsorptionin3c6hand4hsicatrapidthermalprocessing |
| first_indexed |
2023-10-18T20:38:48Z |
| last_indexed |
2023-10-18T20:38:48Z |
| _version_ |
1796150744971214848 |