Carrier transport mechanisms in reverse biased InSb p-n junctions
Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained ex...
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| Дата: | 2015 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121213 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Carrier transport mechanisms in reverse biased InSb p-n junctions / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 267-271. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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dspace |
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irk-123456789-1212132017-06-14T03:07:44Z Carrier transport mechanisms in reverse biased InSb p-n junctions Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained experimental data show that local inhomogeneities in the depletion region are responsible for the excess tunneling current observed in the reverse biased junctions. The inhomogeneities have been attributed to dislocations, precipitates or other extended defects. A phenomenological model is proposed to explain experimental data. 2015 Article Carrier transport mechanisms in reverse biased InSb p-n junctions / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 267-271. — Бібліогр.: 28 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.267 PACS 73.40.Kp, 73.40.Gk http://dspace.nbuv.gov.ua/handle/123456789/121213 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained experimental data show that local inhomogeneities in the depletion region are responsible for the excess tunneling current observed in the reverse biased junctions. The inhomogeneities have been attributed to dislocations, precipitates or other extended defects. A phenomenological model is proposed to explain experimental data. |
| format |
Article |
| author |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| spellingShingle |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. Carrier transport mechanisms in reverse biased InSb p-n junctions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| author_sort |
Sukach, A.V. |
| title |
Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_short |
Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_full |
Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_fullStr |
Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_full_unstemmed |
Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_sort |
carrier transport mechanisms in reverse biased insb p-n junctions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121213 |
| citation_txt |
Carrier transport mechanisms in reverse biased InSb p-n junctions / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 267-271. — Бібліогр.: 28 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:38:55Z |
| last_indexed |
2023-10-18T20:38:55Z |
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1796150748892889088 |