Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing
Used in this work is the stationary model of the process of chemical-anddynamical polishing (CDP) the substrates in the case of balance between diffusion, convective and chemical fluxes. Obtained has been an analytical expression relating the surface shape in processed material with physical paramet...
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| Дата: | 2015 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121227 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing / G.A. Pashchenko, M.Yu. Kravetskyi, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 330-333. — Бібліогр.: 10 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121227 |
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dspace |
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irk-123456789-1212272017-06-14T03:06:54Z Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing Pashchenko, G.A. Kravetskyi, M.Yu. Fomin, A.V. Used in this work is the stationary model of the process of chemical-anddynamical polishing (CDP) the substrates in the case of balance between diffusion, convective and chemical fluxes. Obtained has been an analytical expression relating the surface shape in processed material with physical parameters of processes taking place under CDP. Calculations performed by the authors enabled to find technological regimes of processing that provides total removal of linear morphological defects from the surface of substrates after cutting. Comparison of experimental profilograms taken from the processed surfaces with theoretical dependences showed their satisfactory agreement. 2015 Article Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing / G.A. Pashchenko, M.Yu. Kravetskyi, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 330-333. — Бібліогр.: 10 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.330 PACS 81.65.Ps http://dspace.nbuv.gov.ua/handle/123456789/121227 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Used in this work is the stationary model of the process of chemical-anddynamical polishing (CDP) the substrates in the case of balance between diffusion, convective and chemical fluxes. Obtained has been an analytical expression relating the surface shape in processed material with physical parameters of processes taking place under CDP. Calculations performed by the authors enabled to find technological regimes of processing that provides total removal of linear morphological defects from the surface of substrates after cutting. Comparison of experimental profilograms taken from the processed surfaces with theoretical dependences showed their satisfactory agreement. |
| format |
Article |
| author |
Pashchenko, G.A. Kravetskyi, M.Yu. Fomin, A.V. |
| spellingShingle |
Pashchenko, G.A. Kravetskyi, M.Yu. Fomin, A.V. Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Pashchenko, G.A. Kravetskyi, M.Yu. Fomin, A.V. |
| author_sort |
Pashchenko, G.A. |
| title |
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| title_short |
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| title_full |
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| title_fullStr |
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| title_full_unstemmed |
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| title_sort |
modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121227 |
| citation_txt |
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing / G.A. Pashchenko, M.Yu. Kravetskyi, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 330-333. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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| first_indexed |
2023-10-18T20:38:56Z |
| last_indexed |
2023-10-18T20:38:56Z |
| _version_ |
1796150750371381248 |