Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist

Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist

This study reports on development of the interference lithography (IL) technique applying the resist based on chalcogenide glass films for fabrication of gold chips in the nform of periodic surface nanostructures for surface plasmon resonance (SPR) refractometers. The IL technique was optimized for...

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Бібліографічні деталі
Дата:2015
Автори: Dan’ko, V.A., Dorozinsky, G.V., Indutnyi, I.Z., Myn’ko, V.I., Ushenin, Yu.V., Shepeliavyi, P.E., Lukaniuk, M.V., Korchovyi, A.A., Khrystosenko, R.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121271
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist / V.A. Dan’ko, G.V. Dorozinsky, I.Z. Indutnyi, V.I. Myn’ko, Yu.V. Ushenin, P.E. Shepeliavyi, M.V. Lukaniuk, A.A. Korchovyi, R.V. Khrystosenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 438-442. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1212712017-06-14T03:07:32Z Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist Dan’ko, V.A. Dorozinsky, G.V. Indutnyi, I.Z. Myn’ko, V.I. Ushenin, Yu.V. Shepeliavyi, P.E. Lukaniuk, M.V. Korchovyi, A.A. Khrystosenko, R.V. This study reports on development of the interference lithography (IL) technique applying the resist based on chalcogenide glass films for fabrication of gold chips in the nform of periodic surface nanostructures for surface plasmon resonance (SPR) refractometers. The IL technique was optimized for patterning the Au layers and formation of one-dimensional (grating) structures with the spatial frequency close to 3300 mm⁻¹. The spatial frequency and depth of grating grooves were selected with account of the condition for Bragg reflection of plasmons at the operation wavelength of SPR refractometer and given environment (which is a condition for enhancing biosensor sensitivity as compared to that of a flat Au chip surface). It has experimentally been demonstrated that the use of diffraction patterns in SPR sensor increases its response by 17%. 2015 Article Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist / V.A. Dan’ko, G.V. Dorozinsky, I.Z. Indutnyi, V.I. Myn’ko, Yu.V. Ushenin, P.E. Shepeliavyi, M.V. Lukaniuk, A.A. Korchovyi, R.V. Khrystosenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 438-442. — Бібліогр.: 15 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.438 PACS 73.20.Mf, 78.67.-n, 81.16.nd, 85.40.Hp http://dspace.nbuv.gov.ua/handle/123456789/121271 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description This study reports on development of the interference lithography (IL) technique applying the resist based on chalcogenide glass films for fabrication of gold chips in the nform of periodic surface nanostructures for surface plasmon resonance (SPR) refractometers. The IL technique was optimized for patterning the Au layers and formation of one-dimensional (grating) structures with the spatial frequency close to 3300 mm⁻¹. The spatial frequency and depth of grating grooves were selected with account of the condition for Bragg reflection of plasmons at the operation wavelength of SPR refractometer and given environment (which is a condition for enhancing biosensor sensitivity as compared to that of a flat Au chip surface). It has experimentally been demonstrated that the use of diffraction patterns in SPR sensor increases its response by 17%.
format Article
author Dan’ko, V.A.
Dorozinsky, G.V.
Indutnyi, I.Z.
Myn’ko, V.I.
Ushenin, Yu.V.
Shepeliavyi, P.E.
Lukaniuk, M.V.
Korchovyi, A.A.
Khrystosenko, R.V.
spellingShingle Dan’ko, V.A.
Dorozinsky, G.V.
Indutnyi, I.Z.
Myn’ko, V.I.
Ushenin, Yu.V.
Shepeliavyi, P.E.
Lukaniuk, M.V.
Korchovyi, A.A.
Khrystosenko, R.V.
Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Dan’ko, V.A.
Dorozinsky, G.V.
Indutnyi, I.Z.
Myn’ko, V.I.
Ushenin, Yu.V.
Shepeliavyi, P.E.
Lukaniuk, M.V.
Korchovyi, A.A.
Khrystosenko, R.V.
author_sort Dan’ko, V.A.
title Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist
title_short Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist
title_full Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist
title_fullStr Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist
title_full_unstemmed Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist
title_sort nanopatterning au chips for spr refractometer by using interference lithography and chalcogenide photoresist
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2015
url http://dspace.nbuv.gov.ua/handle/123456789/121271
citation_txt Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist / V.A. Dan’ko, G.V. Dorozinsky, I.Z. Indutnyi, V.I. Myn’ko, Yu.V. Ushenin, P.E. Shepeliavyi, M.V. Lukaniuk, A.A. Korchovyi, R.V. Khrystosenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 438-442. — Бібліогр.: 15 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:02Z
last_indexed 2023-10-18T20:39:02Z
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