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Effect of mechanical stress on operation of diode temperature sensors

Effect of mechanical stress on operation of diode temperature sensors

Effect of uniaxial elastic strain (of moderate magnitude) on operation of n+- p-type diode temperature sensor made in silicon is considered theoretically. It is assumed that operating current and stress direction coincide with each other and with one of three main crystallographic directions [100],...

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Bibliographic Details
Main Authors: Borblik, V.L., Shwarts, Yu.M., Venger, E.F.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121331
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http://dspace.nbuv.gov.ua/handle/123456789/121331

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