Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after...
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| Дата: | 2016 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121528 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1215282017-06-15T03:05:42Z Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures Iliash, S.A. Kondratenko, S.V. Yakovliev, A.S. Kunets, Vas.P. Mazur, Yu.I. Salamo, G.J. Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombination process as well as the photoconductivity mechanism was discussed. 2016 Article Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.075 PACS 72.40.+w, 73.40.-e, 73.63.Nm http://dspace.nbuv.gov.ua/handle/123456789/121528 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombination process as well as the photoconductivity mechanism was discussed. |
| format |
Article |
| author |
Iliash, S.A. Kondratenko, S.V. Yakovliev, A.S. Kunets, Vas.P. Mazur, Yu.I. Salamo, G.J. |
| spellingShingle |
Iliash, S.A. Kondratenko, S.V. Yakovliev, A.S. Kunets, Vas.P. Mazur, Yu.I. Salamo, G.J. Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Iliash, S.A. Kondratenko, S.V. Yakovliev, A.S. Kunets, Vas.P. Mazur, Yu.I. Salamo, G.J. |
| author_sort |
Iliash, S.A. |
| title |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures |
| title_short |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures |
| title_full |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures |
| title_fullStr |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures |
| title_full_unstemmed |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures |
| title_sort |
thermally stimulated conductivity in ingaas/gaas quantum wire heterostructures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2016 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121528 |
| citation_txt |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:39:46Z |
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2023-10-18T20:39:46Z |
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