2025-02-22T10:38:03-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121592%22&qt=morelikethis&rows=5
2025-02-22T10:38:03-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121592%22&qt=morelikethis&rows=5
2025-02-22T10:38:03-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T10:38:03-05:00 DEBUG: Deserialized SOLR response
An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications

An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications

An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite order of continuity what assures smooth transitions between different operatio...

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Bibliographic Details
Main Authors: Houk, Yu., Iniguez, B., Flandre, D., Nazarov, A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121592
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http://dspace.nbuv.gov.ua/handle/123456789/121592

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