Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells
In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the voltage and current generator modes with various steps, have shown irregulari...
Збережено в:
| Дата: | 2006 |
|---|---|
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121633 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells / O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 45-48. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121633 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1216332017-06-16T03:03:14Z Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the voltage and current generator modes with various steps, have shown irregularities in the regions of negative differential resistance and specific before-breakdown part. Long-lasting relaxation of conductivity of GaP crystal with nonuniformity of defect distribution was observed. From analysis of current-flow mechanisms, it was proposed that atypical GaP light-diode electrical characteristics degradation is caused by complex traps shaped as quantum wells in the p-n junction. 2006 Article Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells / O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 45-48. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 68.35, 73.40. K http://dspace.nbuv.gov.ua/handle/123456789/121633 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the voltage and current generator modes with various steps, have shown irregularities in the regions of negative differential resistance and specific before-breakdown part. Long-lasting relaxation of conductivity of GaP crystal with nonuniformity of defect distribution was observed. From analysis of current-flow mechanisms, it was proposed that atypical GaP light-diode electrical characteristics degradation is caused by complex traps shaped as quantum wells in the p-n junction. |
| format |
Article |
| author |
Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| spellingShingle |
Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| author_sort |
Konoreva, O. |
| title |
Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells |
| title_short |
Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells |
| title_full |
Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells |
| title_fullStr |
Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells |
| title_full_unstemmed |
Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells |
| title_sort |
features of current-voltage characteristics inherent to gap light-emitting diodes with quantum wells |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121633 |
| citation_txt |
Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells / O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 45-48. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT konorevao featuresofcurrentvoltagecharacteristicsinherenttogaplightemittingdiodeswithquantumwells AT opilatv featuresofcurrentvoltagecharacteristicsinherenttogaplightemittingdiodeswithquantumwells AT pinkovskam featuresofcurrentvoltagecharacteristicsinherenttogaplightemittingdiodeswithquantumwells AT tartachnykv featuresofcurrentvoltagecharacteristicsinherenttogaplightemittingdiodeswithquantumwells |
| first_indexed |
2023-10-18T20:39:56Z |
| last_indexed |
2023-10-18T20:39:56Z |
| _version_ |
1796150792971878400 |