Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films
In this work, the results of investigations of DLi spectra in α-SiC crystals and films with a low impurity concentration have been presented. Photoluminescence spectra of lightly doped SiC single crystals and films with the impurity concentration of ND–NA ~ (2…8)∙10¹⁶ cm⁻³, ND ~ (5…8)∙10¹⁷ cm⁻³, and...
Збережено в:
| Дата: | 2015 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121816 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 209-214. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121816 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1218162017-06-19T03:03:05Z Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. In this work, the results of investigations of DLi spectra in α-SiC crystals and films with a low impurity concentration have been presented. Photoluminescence spectra of lightly doped SiC single crystals and films with the impurity concentration of ND–NA ~ (2…8)∙10¹⁶ cm⁻³, ND ~ (5…8)∙10¹⁷ cm⁻³, and ND–NA >3∙10¹⁷ cm⁻³, ND ≥ 1∙10¹⁸ cm⁻³ (NDLsamples) were investigated within the temperature range 4.2…77 K. Complex spectroscopic study of one-dimensional disordered structures caused by solid phase transformations in SiC crystals was presented. Disordered growth D-layers in lightly doped crystals and α-SiC films were investigated using low temperature photoluminescence. The analysis testifies that DL and SF spectra hand-in-hand follow the structure transformations. It has been shown that the DL and SF spectra of luminescence reflect the fundamental logic of SiC polytypes structure. This allows to observe the structure changes at the phase transformations, the growth of SiC polytypes and to control their aggregates. 2015 Article Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 209-214. — Бібліогр.: 9 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.209 PACS 64.70.K-, 78.60.Lc http://dspace.nbuv.gov.ua/handle/123456789/121816 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In this work, the results of investigations of DLi spectra in α-SiC crystals and films with a low impurity concentration have been presented. Photoluminescence spectra of lightly doped SiC single crystals and films with the impurity concentration of ND–NA ~ (2…8)∙10¹⁶ cm⁻³, ND ~ (5…8)∙10¹⁷ cm⁻³, and ND–NA >3∙10¹⁷ cm⁻³, ND ≥ 1∙10¹⁸ cm⁻³ (NDLsamples) were investigated within the temperature range 4.2…77 K. Complex spectroscopic study of one-dimensional disordered structures caused by solid phase transformations in SiC crystals was presented. Disordered growth D-layers in lightly doped crystals and α-SiC films were investigated using low temperature photoluminescence. The analysis testifies that DL and SF spectra hand-in-hand follow the structure transformations. It has been shown that the DL and SF spectra of luminescence reflect the fundamental logic of SiC polytypes structure. This allows to observe the structure changes at the phase transformations, the growth of SiC polytypes and to control their aggregates. |
| format |
Article |
| author |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| spellingShingle |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| author_sort |
Vlaskina, S.I. |
| title |
Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films |
| title_short |
Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films |
| title_full |
Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films |
| title_fullStr |
Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films |
| title_full_unstemmed |
Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films |
| title_sort |
structure of photoluminescence dl-spectra and phase transformation in lightly doped sic crystals and films |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121816 |
| citation_txt |
Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 209-214. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT vlaskinasi structureofphotoluminescencedlspectraandphasetransformationinlightlydopedsiccrystalsandfilms AT mishinovagn structureofphotoluminescencedlspectraandphasetransformationinlightlydopedsiccrystalsandfilms AT vlaskinvi structureofphotoluminescencedlspectraandphasetransformationinlightlydopedsiccrystalsandfilms AT rodionovve structureofphotoluminescencedlspectraandphasetransformationinlightlydopedsiccrystalsandfilms AT svechnikovgs structureofphotoluminescencedlspectraandphasetransformationinlightlydopedsiccrystalsandfilms |
| first_indexed |
2023-10-18T20:40:23Z |
| last_indexed |
2023-10-18T20:40:23Z |
| _version_ |
1796150816768262144 |