Ellipsometric evidence of CoSi₂ formation in Co/Si multilayer induced by thermal annealing

• Дата: 2005
• Автори: Kudryavtsev, Y.V., Lee, Y.P., Hyun, Y.H., Pavlova, E.P., Makogon, Y.N.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2005
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/137685
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Ellipsometric evidence of CoSi₂ formation in Co/Si multilayer induced by thermal annealing / Y.V. Kudryavtsev, Y.P. Lee, Y.H. Hyun, E.P. Pavlova, Y.N. Makogon // Functional Materials. — 2005. — Т. 12, № 2. — С. 366-370. — Бібліогр.: 18 назв. — англ.

The work aim is to demonstrate the potential of the spectroscopic ellipsometry (SE) approach to study the solid state reactions, both spontaneous and/or induced by thermal annealing, in (3.0 nm Co / 10.6 nm Si)₂₀ multilayered film (MLF). The regions with a stoichiometry close to Co₂Si are supposed to be formed spontaneously in the asdeposited Co/Si MLF. Sequential anneals of Co/Si MLF at 400, 600, and 700℃ do not produce any visible changes in their amorphous-like large-angle X-ray diffraction (HAXRD) spectra, while the SE indicates the formation of regions with a stoichiometry close to CoSi. Independently on the HAXRD results, the conclusion on the formation of CoSi₂ phase induced by annealing of Co/Si MLF at 800℃ can be confidently done on the basis of only optical study.