Non-self-sustained arc discharge in vapors of constructional materials of nuclear power engineering

The paper presents the results of experimental studies of the conditions of ignition and burning for non-selfsustained arc discharges in nickel and tantalum vapors. The investigations were carried out with the aim of developing new methods for efficient generation of plasma-free and highly ionized...

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Збережено в:
Бібліографічні деталі
Дата:2018
Автори: Borisenko, A.G., Kostin, E.G., Rokytskyi, O.А., Fedorovich, O.A.
Формат: Стаття
Мова:English
Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2018
Назва видання:Вопросы атомной науки и техники
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/149057
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Non-self-sustained arc discharge in vapors of constructional materials of nuclear power engineering / A.G. Borisenko, E.G. Kostin, O.А. Rokytskyi, O.A. Fedorovich // Вопросы атомной науки и техники. — 2018. — № 6. — С. 241-244. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Резюме:The paper presents the results of experimental studies of the conditions of ignition and burning for non-selfsustained arc discharges in nickel and tantalum vapors. The investigations were carried out with the aim of developing new methods for efficient generation of plasma-free and highly ionized plasma flows of structural materials of nuclear power engineering. In the experiments, the minimum power required to obtaining a sufficient vapor pressure of working material and ignition of vacuum arc discharges was obtained. The values of the minimum discharge power in the conditions of their stable burning were also determined; the current-voltage characteristics of the discharges in vacuum and under conditions of gas input into the vacuum chamber were studied. It is shown that the created plasma streams can be used to deposit the films not only on metallic and semiconductor materials, but also on dielectric substrates.