Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition

• Дата: 2018
• Автори: Levchenko, I.V., Tomashyk, V.M., Stratiychuk, I.B., Malanych, G.P., Stanetska, A.S., Korchovyi, A.A.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2018
• Назва видання: Functional Materials
• Теми: Technology
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/154462
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2018. — Т. 25, № 1. — С. 165-171. — Бібліогр.: 11 назв. — англ.

The chemical dissolution of InAs, InSb, GaAs and GaSb crystals in (NH₄)₂Cr₂O₇-HBr-C₆H₈O₇ etching solutions has been investigated. The dissolution rate of the semiconductor materials has been measured as a function of etchant composition, stirring rate and temperature. The limiting stages of dissolut...