Investigation of interaction between ion-beam plasma and processed surface during the synthesis of tantalum diboride and pentaoxide

• Main Authors: Yakovin, S., Zykov, A., Dudin, S., Dakhov, A., Yefymenko, N.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2019
• Series: Вопросы атомной науки и техники
• Subjects: Low temperature plasma and plasma technologies
• Online Access: http://dspace.nbuv.gov.ua/handle/123456789/194909

The paper is devoted to investigation of spatial distributions of ion current density to a sample in technological set-up with magnetron sputtering system and ICP source. The dependence of the ion flux towards the processed surface on the parameters of the deposition process was measured. The following parameters were varied: magnetron discharge power, gas type and pressure, target-sample distance, inductive discharge power, and bias potential applied to the samples. The effect of nonequilibrium heating of the sample surface due to relaxation of kinetic energy of ions, atoms and electrons, as well as energy of exothermic chemical reactions at synthesis of Ta₂O₅ and TaB₂ films is discussed. The influence of sample shape on the ion bombardment is also investigated.