The bias voltage and its influence on the etching rate of silicon
The influence of the bias voltage on the silicon etching rate in the plasma-chemical reactor (PСR) with controlled magnetic fields have been investigated. The dependences of the silicon etching rate on the power, discharge current and on the pressure in the chamber PCR are obtained. It is found that...
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| Cite this: | The bias voltage and its influence on the etching rate of silicon / О.А. Fedorovich, V.V. Hladkovskiy, B.P. Polozov, М.P. Kruglenko // Вопросы атомной науки и техники. — 2015. — № 6. — С. 146-150. — Бібліогр.: 12 назв. — англ. |
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Fedorovich, О.А. Hladkovskiy, V.V. Polozov, B.P. Kruglenko, М.P. 2017-01-20T18:14:07Z 2017-01-20T18:14:07Z 2015 The bias voltage and its influence on the etching rate of silicon / О.А. Fedorovich, V.V. Hladkovskiy, B.P. Polozov, М.P. Kruglenko // Вопросы атомной науки и техники. — 2015. — № 6. — С. 146-150. — Бібліогр.: 12 назв. — англ. 1562-6016 PACS: 52.77.Bn, 81.65.Cf https://nasplib.isofts.kiev.ua/handle/123456789/112376 The influence of the bias voltage on the silicon etching rate in the plasma-chemical reactor (PСR) with controlled magnetic fields have been investigated. The dependences of the silicon etching rate on the power, discharge current and on the pressure in the chamber PCR are obtained. It is found that at high bias voltages the main mechanism influencing on the etch rate drop is a material sputtering of the working electrode and its redeposition onto the surface of processed silicon wafers. Експериментально досліджено вплив напруги зміщення на швидкість травлення кремнію в плазмохімічному реакторі (ПХР) з керованими магнітними полями. З’ясовано, що при високих значеннях напруги зміщення основним механізмом, що впливає на зменшення швидкості травлення, є розпилення матеріалу робочого електрода і переосадження його на поверхню оброблюваних кремнієвих пластин. Экспериментально исследовано влияние напряжения смещения на скорость травления кремния в плазмохимическом реакторе (ПХР) с управляемыми магнитными полями. Установлено, что при высоких величинах напряжения смещения основным механизмом, влияющим на уменьшение скорости травления, является распыление материала рабочего электрода и переосаждение его на поверхность обрабатываемых кремниевых пластин. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Экспериментальные методы и обработка данных The bias voltage and its influence on the etching rate of silicon Напруга зміщення і її вплив на швидкість травлення кремнію Напряжение смещения и его влияние на скорость травления кремния Article published earlier |
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DSpace DC |
| title |
The bias voltage and its influence on the etching rate of silicon |
| spellingShingle |
The bias voltage and its influence on the etching rate of silicon Fedorovich, О.А. Hladkovskiy, V.V. Polozov, B.P. Kruglenko, М.P. Экспериментальные методы и обработка данных |
| title_short |
The bias voltage and its influence on the etching rate of silicon |
| title_full |
The bias voltage and its influence on the etching rate of silicon |
| title_fullStr |
The bias voltage and its influence on the etching rate of silicon |
| title_full_unstemmed |
The bias voltage and its influence on the etching rate of silicon |
| title_sort |
bias voltage and its influence on the etching rate of silicon |
| author |
Fedorovich, О.А. Hladkovskiy, V.V. Polozov, B.P. Kruglenko, М.P. |
| author_facet |
Fedorovich, О.А. Hladkovskiy, V.V. Polozov, B.P. Kruglenko, М.P. |
| topic |
Экспериментальные методы и обработка данных |
| topic_facet |
Экспериментальные методы и обработка данных |
| publishDate |
2015 |
| language |
English |
| container_title |
Вопросы атомной науки и техники |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| format |
Article |
| title_alt |
Напруга зміщення і її вплив на швидкість травлення кремнію Напряжение смещения и его влияние на скорость травления кремния |
| description |
The influence of the bias voltage on the silicon etching rate in the plasma-chemical reactor (PСR) with controlled magnetic fields have been investigated. The dependences of the silicon etching rate on the power, discharge current and on the pressure in the chamber PCR are obtained. It is found that at high bias voltages the main mechanism influencing on the etch rate drop is a material sputtering of the working electrode and its redeposition onto the surface of processed silicon wafers.
Експериментально досліджено вплив напруги зміщення на швидкість травлення кремнію в плазмохімічному реакторі (ПХР) з керованими магнітними полями. З’ясовано, що при високих значеннях напруги зміщення основним механізмом, що впливає на зменшення швидкості травлення, є розпилення матеріалу робочого електрода і переосадження його на поверхню оброблюваних кремнієвих пластин.
Экспериментально исследовано влияние напряжения смещения на скорость травления кремния в плазмохимическом реакторе (ПХР) с управляемыми магнитными полями. Установлено, что при высоких величинах напряжения смещения основным механизмом, влияющим на уменьшение скорости травления, является распыление материала рабочего электрода и переосаждение его на поверхность обрабатываемых кремниевых пластин.
|
| issn |
1562-6016 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/112376 |
| citation_txt |
The bias voltage and its influence on the etching rate of silicon / О.А. Fedorovich, V.V. Hladkovskiy, B.P. Polozov, М.P. Kruglenko // Вопросы атомной науки и техники. — 2015. — № 6. — С. 146-150. — Бібліогр.: 12 назв. — англ. |
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| fulltext |
ISSN 1562-6016. ВАНТ. 2015. №6(100) 146
THE BIAS VOLTAGE AND ITS INFLUENCE
ON THE ETCHING RATE OF SILICON
О.А. Fedorovich, V.V. Hladkovskiy, B.P. Polozov, М.P. Kruglenko
Institute for Nuclear Research of NASU, Kiev, Ukraine
E-mail: oafedorovich@kinr.kiev.ua
The influence of the bias voltage on the silicon etching rate in the plasma-chemical reactor (PСR) with con-
trolled magnetic fields have been investigated. The dependences of the silicon etching rate on the power, discharge
current and on the pressure in the chamber PCR are obtained. It is found that at high bias voltages the main mecha-
nism influencing on the etch rate drop is a material sputtering of the working electrode and its redeposition onto the
surface of processed silicon wafers.
PACS: 52.77.Bn, 81.65.Cf
INTRODUCTION
The processes inside in plasma-chemical reactors
have been insufficiently studied [1]. This is primarily
due to the complexity of the diagnostic of the phenome-
na occurring in chemically active multicomponent
plasma. In the investigation of the optical plasma spec-
tra manage to identify only most intense lines belonging
to the excited atoms [2]. Discharge in chemically active
plasma often can cause chemical reactions; which are
not occurring during normal chemical processes. There-
fore, the optical spectra of molecules formed in these
processes are absent in existing tables of molecular
spectra. For example, in the etching process of silicon in
a fluorine-containing plasma (SF6) formed molecules
such as SF5, SF4, SF3, SF3О, SF2О2, SF2О, SFО and
so on, excluding the products of reactions between fluo-
rine and silicon and compounds of sulfur with oxygen
[2]. The problems of electron and ion stimulation, as
well as, the influence of energy stimulating of the parti-
cles on the etching rate of different materials are little-
studied, including the most widely used material – sili-
con. At plasmachemical treatment of silicon the fluorine
containing compounds are mainly used in a mixture
with oxygen, argon and other gases that does not lead to
the destruction of vacuum pumps and other elements of
vacuum systems containing aluminum alloys.
The aim of this work is to study the influence of the
magnitude and polarity of the direct current voltage ap-
plied to the active and grounded electrodes on the etch-
ing rate of silicon. This voltage can be as self-bias volt-
age that occurs automatically when the RF-discharge in
the PCR, and as the voltage from an external source
connected via appropriate filters. The self-bias voltage
called the direct voltage between workers and grounded
electrodes RF-discharge due to the different mobility of
electrons and ions. It is necessary to ascertain the rea-
sons for reducing the rate of etching of silicon with an
increase in voltage on the electrode placed on it with the
sample above -250 V. Many processes in the creation of
element base of microelectronics, computer technology,
solar energy and others require high plasma etching rate
of silicon with minimal radiation damage. For example,
the minimum time is important for the silicon wafers
etching when creating isolation in photovoltaic convert-
ers [3]. Increasing the time of etching of the plates leads
to diffusion of chemically active atoms and radicals
between layers and the appearance of undercutting the
surface closer to the ends, which leads to a reduction
their efficiency. The results of the research allow to
choose optimal modes of silicon etching with minimum
radiation damage and they will give the possibility the
use of photoresists with minimal thicknesses.
MAIN PART
Plasma chemical reactors which were developed in
the Institute for Nuclear Research of NASU [2, 3], have
an area of active electrode smaller than grounded elec-
trode. This leads to the appearance of negative self-bias
potential on the active electrode and, consequently, to
the ion stimulation in the etching materials. In the case
of RF-discharges without magnetic fields, the direct
self-bias voltage determines the average energy of ions
bombarding the target and is approximately equal to the
amplitude of the RF-voltage, (proportionality factor is
equal to unity) according to ref. [4, 6]. In the RF dis-
charge with magnetic fields a directly proportional rela-
tionship of self-bias voltage and the RF-discharge volt-
age is not broken but changing the proportionality coef-
ficient [7]. In the case of RF-discharges in magnetic
fields, the self-bias voltage and, consequently, energies
of the ions can use adjustable magnetic fields and
changing their configurations [7]. The self-bias voltage
is necessary to change regime from soft etching without
radiation damage to the sputtering regime of different
materials. Self-bias voltage is able to change from -20 to
-1000 V or more.
The gases were fed in the reactor in a constant quan-
tity and were controlled with the help by the oil flowme-
ter. The etching is occurred in gases: SF6, СF4, С3F8,
CCl4, their mixtures with oxygen, argon in different
proportions, etc. Calibrated flowmeters were installed
on each gas separately. The pressure was regulated in
the discharge chamber by the pumping speed, or the
change of the gas flow at constant pumping speed. The
power RF-generator with frequency 13.56 MHz also
remained constant during every experiment and regulat-
ed from 0.2 to 4 kW.
The silicon etching rate under the same discharge
conditions has a maximum and decreases with excess
negative voltage of magnitude 250 V on the electrode.
In ref. [8, 9], the self-bias voltage is changed by adjust-
ing the current of the lower magnetic field coil at a con-
stant current of the middle magnetic field coil. Howev-
er, in this case, the ambiguity arises because with the
change of the magnetic field is changed the etching rate.
The dependence of the silicon etching rate from the ten-
mailto:oafedorovich@kinr.kiev.ua
ISSN 1562-6016. ВАНТ. 2015. №6(100) 147
sion of magnetic field with other unchanged conditions
shown in Fig. 1. The silicon etching rate increases from
1.05 to 1.6 μm/min with decreasing self-bias voltage
from - 270 to - 100 V. The feature of the dependence of
the etching rate from the magnetic field tension is that
the silicon etching rata, practically, does not increase
with the increase of the field strength up to 50 Oe.
Fig. 1. The dependence of the etching rate
of the magnetic field
The self-bias voltage decreases from -270 to -210 V.
The increase in the magnetic field from 80 to 160 Oe
induce increases in the silicon etching speed from 1.1 to
1.6 μm/min at other constant discharge conditions (while
reducing self-bias voltage of -160 to -100 V). This is slight-
ly contrary to the usual notions, because it was thought
that the increase in the ion energy increases the etching
rate. Therefore, it is not clear exactly which parameters
are decisive for obtaining the maximum etching rate of
silicon. Thus, the influence of the bias voltage and the
of other discharge parameters on the silicon etching rate
it is necessary to examine in more detail.
Fig. 2. The dependence of the etching rate of discharge
power (P=3.5·10-2 Torr)
As is shown in the Fig. 2, the etching rate of silicon
has a maximum and decreases with increasing power
discharge. If only power discharge was increased and all
other parameters, such as: pressure, the gas composi-
tion, magnetic field tension and configuration, the cool-
ing temperature of the working electrode, etc. were un-
changed.
These results are difficult to explain, therefore, we
performed a series of special studies on investigating the
causes of the observed effect.
The dependence of silicon etch rate of the discharge
current is shown in Fig. 3. As in Fig. 2, a similar de-
pendence is observed: in the beginning the silicon etch-
ing rate increase, after that maximum of the rate and
then rate reducing with the continuous increase of the
current (but in this case the self-bias voltage increases).
Fig. 3. The dependence of the silicon etching rate
on the discharge current
The silicon etching rate begins to decrease when ex-
ceeding the bias voltage -170 V on the working elec-
trode, despite increases the discharge current and its
power. A similar result was obtained by etching silicon
with connecting additional generator (adjustable fre-
quency 40…500 kHz), which allows to remove the sur-
face charge and increase the etching rate (see Fig. 3).
After inclusion of middle magnetic field coil in anti-
phase to the other two coils, self-bias voltage is increase
to minus 400…440 V. It led to the decrease in the etch-
ing rate of silicon in two times at currents in the range
of 12…14 A. The dependence of self-bias voltages from
the magnitude of the voltage drop in the discharge for
the two cases shows in Fig. 4: 1 − without additional
bias generator; 2 − with the connection of additional
bias generator. In the first case, when the effective cur-
rent in the discharge increases there is the voltage drop
across the discharge increase and self-bias voltage in-
creases in proportion to it (see Fig. 4, curve 1). RF-
discharge effective current was measured with a high-
frequency ammeter with a thermocouple transducer type
T210. By increasing the voltage drop across the dis-
charge from -180 to -250 V self-bias voltage is in-
creased from -110 to -250 V.
Fig. 4. The dependence of self-bias voltage from the
magnitude of the voltage drop on the discharge for the
two cases: 1 − without additional bias generator;
2 − with the connection of additional bias generator
(P=3.5·10-2 Torr)
ISSN 1562-6016. ВАНТ. 2015. №6(100) 148
With the connection of additional bias generator the
voltage drop across the discharge does not change with
increasing discharge current (it is -200 to -220 V), and
the self-bias voltage is increased from -120 to -200 V.
The current, which produced an additional generator
was 0.9…1.1 A. Thus, by applying an additional bias
generator you can control self-bias voltage.
Such features of monosilicon etching rates depend-
encies from discharge currents and bias voltages led to
the need of additional research.
Below are dependences of etching rates from the
pressure in the PCR.
When the magnetic field strength is 100 Oe, the self-
bias voltage is practically unchanged (220 V) with in-
creasing pressure. At the same time discharge current
increased from 9 to 10 A with the pressure from
10-2 to 5·10-2 Torr, and then stabilized [7]. With in-
creasing pressure, the etching rate increases [9], but
when the pressure varies from 0.06 to 0.1 Torr, the etch-
ing rate almost no increases, as it reaches saturation and
starts to decrease (Fig. 5). The self-bias voltage on the
active electrode is changed from -60 to -85 V, and then
increases to -60 V. Essential dependence DC self-bias in
the discharge without a magnetic field with a change in
pressure from 1.6 to 500 mT in ref. [5] was not ob-
served.
Fig. 5. The dependence of the etching rate
from the pressure in the reactor (Id=8 A, H=150 Oe)
Fig. 6. The dependence of the power on the positive
and negative polarity of the DC voltage
In ref. [4 - 9] have been shown the dependence of
the silicon etching rate on self-bias voltage, which is
obtained by different methods, including DC regulated
voltage from additional power sources of different po-
larity, which is applied to the active and grounded elec-
trodes. The DC voltage has a little effect on the RF dis-
charge. In Fig. 6 shows the dependence of power, which
is applied to the electrodes from an external source
through a special filter, both in positive and negative
polarity DC voltage.
When recalculation maximum power per unit area of
the active electrode, which was introduced by RF-
discharge and DC voltage, it is clear that the RF-power
is under the same conditions of 0.89 W/cm2, and the
constant voltage is 0.0134 W/cm2. The ratio of these
quantities 1:67 and DC power does not exceed 1.5% of
the RF-power. Therefore, the influence of a DC voltage
from an external source on the plasma parameters is
negligible. At the same time, the silicon etching rate is
changed almost twice in contrast to other discharge pa-
rameters such as the discharge current, the gas pressure,
the magnetic field magnitude and configuration, the size
and temperature of the samples surface being treated.
Particular interest is the dependence of the silicon
etching rate at the substrate ground (or near it) potential.
At ground potential on the substrate holder occurs only
pure plasma etching of silicon without ionic and elec-
tronic stimulation (Fig. 7). At zero constant potential
between the active and grounded electrodes etching rate
is slightly higher than at a small negative potential.
Fig. 7. The dependence of the etching rate of the bias
voltage (Id=6 A, P=4·10-2 Torr)
This can be explained by the influence of the
negative ions which are formed in electronegative gases
which are F and Cl. The binding energy of the electron
in the negative ion F and Cl is respectively 3.4 and
3.62 eV [10]. Therefore the probability of formation of
negative ions of fluorine and chlorine is large enough.
Usually etching of samples occurs at Ubias ≤-200 V.
In this case, in emission spectra most intense lines are
lines of fluorine or chlorine (Fig. 8). At values -(Ubias)
above 250 V sputtering of the substrate masks and the
active stainless steel electrode occurs [11, 12]. The
emission spectra of the plasma at high negative self-bias
voltage are shown in Fig. 9.
Analysis of the emission spectra shown that the
qualitative composition of the plasma is changing cardi-
nally. Mainly observed Fe, Ni, Ti, Cr lines emission.
Occasionally it is possible to observe molecular lines
stripes that could not be identified. It is quite clear that
the levels of metal atoms with excitation energies of
3…6 eV have a higher population than the levels of
emission lines of fluorine atoms with excitation energies
of 14…15 eV at the same temperature of plasma. The
reason is that the exponential dependence of the popula-
tions of the states of the atoms according to the Boltz-
mann distribution [10]:
Nj = N0 gj e- Ej/kT,
ISSN 1562-6016. ВАНТ. 2015. №6(100) 149
where N0 − the density of atoms in the ground state; gj
− the statistical weight of the state; k − the Boltzmann
constant; T − gas temperature; Ej − excitation energy of
the atoms in the corresponding state.
Fig. 8. The emission spectrum of the plasma
at Ubias = − 120 V
Fig. 9. The emission spectrum of the plasma
at Ubias = − 300 V
In this case smaller number of excited atoms of met-
als with lower excitation potential can emit stronger
than greater number of fluorine or chlorine atoms with
high excitation energy. Fig. 9 shows that the main line
spectra emitted by excited metal atoms of sputtered
electrodes. Considering that the degree of dissociation
of the chemically active complex molecules becomes
smaller (SF6, CF4, CCl4, etc.) and number of chemical-
ly active excited atoms becomes less then the emission
lines intensity sharply reduced. There is the discharge
operates in the mixture of working gas with the metal
vapor, which is sputterred from the active electrode sur-
face. This is indicated by the presence of metal emission
lines in the spectrum. A significant amount of metal
impurities on the substrate surface was also observed in
X-ray analysis (Fig. 10). It is sufficiently convincing
proof of sputtering product influence on reduction the
silicon etching rate with increasing negative self-bias
voltage (and thus with increasing the ions energy).
X-ray spectral analysis of the chemical composition
of slice of the silicon wafer was performed on the X-ray
analyzer MS-46 (France), which has four X-ray spec-
trometer. Two of them are equipped with LiF and quartz
[10, 11] analyzing crystals, which are designed to check
the hard radiation 1…3 Ǻ, the other two have analyzers
crystals, which are intended to analyzing soft radiation
2…70 Å. This selection of the analyzing crystals allows
the analysis of all elements of the periodic system from
5B to 92U.
Fig. 10. X-ray analysis of the etched silicon samples
depending on bias voltage
The quantitative analysis of the etched silicon sam-
ples was done at oblique slice at ten points of the probe
regime 20 kV, 3 mA. This made it possible to raise the
sensitivity of the method. The results of X-ray analysis
of the etched silicon samples depending on bias voltage
are shown in Fig. 10.
It is quite clear that there are not only excited atoms
of the metal, but also positive metal ions, which under
the influence of negative potential at the active electrode
deposited on it and on the substrate. This leads to the
decrease the etching rate of silicon or other material
with self-bias voltage increasing to values ≥250 V and
leads to manifestation of the sputtering effect of the
active electrode. Iron, nickel and chromium do not form
volatile compounds in the interaction with fluorine and
chlorine. That is why it is difficult to remove them from
the surface of the processed silicon samples. Proof of
this can also become an increase in the amount of iron,
nickel, chromium on the surface of silicon with increas-
ing self-bias voltage. When the bias voltage is increased
from -200 to -400 V, then the concentration of iron on
the silicon surface increases from 0.4 to 1.2%, nickel
from 0 to 0.1%, chromium from 0.1 to 0.3%. This is
convincing evidence of the influence of the active elec-
trode sputtered material and its redeposition onto the
surface of processed silicon wafers. The etching rate of
silicon in the range of bias voltage (150…400) V is de-
creased by 2 times or more (see Fig. 10) [5]. It is im-
portant to note that the actual amount of impurities of
metal on silicon surfaces is ten times higher than that
shown in Fig. 10 because X-rays penetrate into the sili-
con to about 0.5 μm, and metal atoms form on the sur-
face a very thin layer that is tens to hundreds of ang-
stroms.
CONCLUSIONS
When the self-bias voltage between the electrodes
rises above -250 V, then there is an intense sputtering of
the central electrode and redeposition of metal atoms
ISSN 1562-6016. ВАНТ. 2015. №6(100) 150
(which do not form volatile compounds with fluorine
and chlorine). This leads to a sharp decrease in the etch-
ing rate of the processed materials. At the same time
lines of excited atoms of the material from which made
the active electrode appear in the emission spectra. On
the silicon surface by X-ray analysis were detected
impurities of the same material. This indicates that
sputtered material was reprecipitated onto the surface of
treated materials. The amount of impurities increases
with the self-bias voltage. Processing of silicon and oth-
er materials necessary to carry out at bias voltages
smaller than -250 V.
REFERENCES
1. B.S. Danilov, V.Yu. Kireev. Application of low-
temperature plasma for etching and cleaning mate-
rials. M.: “Energoatomizdat”. 1987, p. 264.
2. Е.G. Kostin, V.V. Ustalov, O.A. Fedorovich. Mass
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Article received 09.06.2015
НАПРЯЖЕНИЕ СМЕЩЕНИЯ И ЕГО ВЛИЯНИЕ НА СКОРОСТЬ ТРАВЛЕНИЯ КРЕМНИЯ
О.А. Федорович, В.В. Гладковский, Б.П. Полозов, М.П. Кругленко
Экспериментально исследовано влияние напряжения смещения на скорость травления кремния в плаз-
мохимическом реакторе (ПХР) с управляемыми магнитными полями. Установлено, что при высоких вели-
чинах напряжения смещения основным механизмом, влияющим на уменьшение скорости травления, явля-
ется распыление материала рабочего электрода и переосаждение его на поверхность обрабатываемых крем-
ниевых пластин.
НАПРУГА ЗМІЩЕННЯ І ЇЇ ВПЛИВ НА ШВИДКІСТЬ ТРАВЛЕННЯ КРЕМНІЮ
О.А. Федорович, В.В. Гладковський, Б.П. Полозов, М.П. Кругленко
Експериментально досліджено вплив напруги зміщення на швидкість травлення кремнію в плазмохіміч-
ному реакторі (ПХР) з керованими магнітними полями. З’ясовано, що при високих значеннях напруги змі-
щення основним механізмом, що впливає на зменшення швидкості травлення, є розпилення матеріалу робо-
чого електрода і переосадження його на поверхню оброблюваних кремнієвих пластин.
INTRODUCTION
MAIN PART
CONCLUSIONS
REFERENCES
напряжение смещения и ЕГО влияниЕ на скорость травления кремния
Напруга зміщення і її вплив на швидкість травлення кремнію
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