Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
. Investigated in this work were changes in the concentration of charge carriers ne and their mobilities u, which occur under the influence of thermoannealing of n - Si and n - Ge crystals grown by the Czochralski method. Thermoannealing of n - Si samples was carried out both at 450 °C and 650 °C...
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| Date: | 2012 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118307 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 218-222. — Бібліогр.: 24 назв. — англ. |
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