Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown
Effect of magnetic field (up to 14 T) on current-voltage characteristics of
 silicon n⁺
 -p diodes which manifests hysteresis loops related with low-temperature
 impurity breakdown has been studied. With growth of magnetic field, the hysteresis
 loops are narrowed and...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118325 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of magnetic field on hysteretic characteristics of silicon diodes
 under conditions of low-temperature impurity breakdown / A.B. Aleinikov, V.A. Berezovets, V.L. Borblik, M.M. Shwarts, Yu.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 288-293. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862541236269744128 |
|---|---|
| author | Aleinikov, A.B. Berezovets, V.A. Borblik, V.L. Shwarts, M.M. Shwarts, Yu.M. |
| author_facet | Aleinikov, A.B. Berezovets, V.A. Borblik, V.L. Shwarts, M.M. Shwarts, Yu.M. |
| citation_txt | Effect of magnetic field on hysteretic characteristics of silicon diodes
 under conditions of low-temperature impurity breakdown / A.B. Aleinikov, V.A. Berezovets, V.L. Borblik, M.M. Shwarts, Yu.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 288-293. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Effect of magnetic field (up to 14 T) on current-voltage characteristics of
silicon n⁺
-p diodes which manifests hysteresis loops related with low-temperature
impurity breakdown has been studied. With growth of magnetic field, the hysteresis
loops are narrowed and decreased in amplitude and then disappear, but the breakdown
continues in a soft form. Planar design of the diode has allowed separating the influence
of magnetic field on mobility of the carriers executing impact ionization of the impurities
and on the ionization energy itself. Theoretical analysis of the experimental data
permitted us to determine the dependence of the ionization energy on the magnetic field.
As in other investigated semiconductors, our results demonstrate the dependence of B¹/³
type. A model capable to explain qualitatively the mechanism of suppression of the
hysteresis loops by magnetic field is proposed as well.
|
| first_indexed | 2025-11-24T16:30:18Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118325 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T16:30:18Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Aleinikov, A.B. Berezovets, V.A. Borblik, V.L. Shwarts, M.M. Shwarts, Yu.M. 2017-05-29T18:05:18Z 2017-05-29T18:05:18Z 2012 Effect of magnetic field on hysteretic characteristics of silicon diodes
 under conditions of low-temperature impurity breakdown / A.B. Aleinikov, V.A. Berezovets, V.L. Borblik, M.M. Shwarts, Yu.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 288-293. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/118325 Effect of magnetic field (up to 14 T) on current-voltage characteristics of
 silicon n⁺
 -p diodes which manifests hysteresis loops related with low-temperature
 impurity breakdown has been studied. With growth of magnetic field, the hysteresis
 loops are narrowed and decreased in amplitude and then disappear, but the breakdown
 continues in a soft form. Planar design of the diode has allowed separating the influence
 of magnetic field on mobility of the carriers executing impact ionization of the impurities
 and on the ionization energy itself. Theoretical analysis of the experimental data
 permitted us to determine the dependence of the ionization energy on the magnetic field.
 As in other investigated semiconductors, our results demonstrate the dependence of B¹/³
 type. A model capable to explain qualitatively the mechanism of suppression of the
 hysteresis loops by magnetic field is proposed as well. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown Article published earlier |
| spellingShingle | Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown Aleinikov, A.B. Berezovets, V.A. Borblik, V.L. Shwarts, M.M. Shwarts, Yu.M. |
| title | Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown |
| title_full | Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown |
| title_fullStr | Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown |
| title_full_unstemmed | Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown |
| title_short | Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown |
| title_sort | effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118325 |
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