Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2007
• Автори: Khomenkova, L., Korsunska, N., Sheinkman, M., Stara, T.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118344
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering / L. Khomenkova, N. Korsunska, M. Sheinkman, T. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 21-25. — Бібліогр.: 16 назв. — англ.

The process of thermal decomposition of SiOx layers prepared by magnetron
 sputtering is studied with the use of photoluminescence and Auger and SIMS
 spectroscopies. From these measurements, we obtained the distributions of the emission
 properties and the chemical composition over the depth. The effect of the redistribution
 of silicon and oxygen over the depth is found after the high-temperature annealing which
 results in the formation of a Si nanocrystal. These redistributions result in the appearance
 of a Si-depleted region near the layer-substrate interface. The formation of a depletion
 layer is dependent on the excess of Si. A decrease of the silicon content over the depth of
 annealed layers is accompanied by a decrease of the Si nanocrystal size, as it is
 evidenced by the blue shift of the photoluminescence maximum. The mechanism of
 decomposition of SiOx and the possible reasons for the appearance of a Si-depleted
 region are discussed.