Electroluminescent properties of Tb-doped carbon-enriched silicon oxide
An electroluminescent device utilizing a heterostructure of amorphous terbium
 doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The
 a - SiOx : C : Tb active layer was formed by RF magnetron sputtering of
 a - SiO₁₋x : Cx : H(:Tb) film followed by hig...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| Hauptverfasser: | , , , , , , , , , , , , |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118346 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electroluminescent properties of Tb-doped carbon-enriched silicon oxide / S.I. Tiagulskyi, A.N. Nazarov, S.O. Gordienko, A.V. Vasin, A.V. Rusavsky, T.M. Nazarova, Yu.V. Gomeniuk, V.S. Lysenko, L. Rebohle, M. Voelskow, W. Skorupa, Y. Koshka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 34-40. — Бібліогр.: 30 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862540337617043456 |
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| author | Tiagulskyi, S.I. Nazarov, A.N. Gordienk, S.O. Vasin, A.V. Rusavsky, A.V. Nazarova, T.M. Gomeniuk, Yu.V. Rudko, G.V. Lysenko, V.S. Rebohle, L. Voelskow, M. Skorupa, W. Koshka, Y. |
| author_facet | Tiagulskyi, S.I. Nazarov, A.N. Gordienk, S.O. Vasin, A.V. Rusavsky, A.V. Nazarova, T.M. Gomeniuk, Yu.V. Rudko, G.V. Lysenko, V.S. Rebohle, L. Voelskow, M. Skorupa, W. Koshka, Y. |
| citation_txt | Electroluminescent properties of Tb-doped carbon-enriched silicon oxide / S.I. Tiagulskyi, A.N. Nazarov, S.O. Gordienko, A.V. Vasin, A.V. Rusavsky, T.M. Nazarova, Yu.V. Gomeniuk, V.S. Lysenko, L. Rebohle, M. Voelskow, W. Skorupa, Y. Koshka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 34-40. — Бібліогр.: 30 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | An electroluminescent device utilizing a heterostructure of amorphous terbium
doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The
a - SiOx : C : Tb active layer was formed by RF magnetron sputtering of
a - SiO₁₋x : Cx : H(:Tb) film followed by high-temperature oxidation. It was shown that,
depending on the polarity of the applied voltage, the electroluminescence is either green
or white, which can be attributed to different mechanisms of current transport through the
oxide film – space charge limited bipolar double injection current for green
electroluminescence and trap assisted tunneling or Fowler-Nordheim tunneling for white
electroluminescence.
|
| first_indexed | 2025-11-24T16:06:26Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118346 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T16:06:26Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Tiagulskyi, S.I. Nazarov, A.N. Gordienk, S.O. Vasin, A.V. Rusavsky, A.V. Nazarova, T.M. Gomeniuk, Yu.V. Rudko, G.V. Lysenko, V.S. Rebohle, L. Voelskow, M. Skorupa, W. Koshka, Y. 2017-05-30T05:29:27Z 2017-05-30T05:29:27Z 2014 Electroluminescent properties of Tb-doped carbon-enriched silicon oxide / S.I. Tiagulskyi, A.N. Nazarov, S.O. Gordienko, A.V. Vasin, A.V. Rusavsky, T.M. Nazarova, Yu.V. Gomeniuk, V.S. Lysenko, L. Rebohle, M. Voelskow, W. Skorupa, Y. Koshka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 34-40. — Бібліогр.: 30 назв. — англ. 1560-8034 PACS 72.20.-i, 73.40.-c, 78.60.Fi, 81.15.Cd https://nasplib.isofts.kiev.ua/handle/123456789/118346 An electroluminescent device utilizing a heterostructure of amorphous terbium
 doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The
 a - SiOx : C : Tb active layer was formed by RF magnetron sputtering of
 a - SiO₁₋x : Cx : H(:Tb) film followed by high-temperature oxidation. It was shown that,
 depending on the polarity of the applied voltage, the electroluminescence is either green
 or white, which can be attributed to different mechanisms of current transport through the
 oxide film – space charge limited bipolar double injection current for green
 electroluminescence and trap assisted tunneling or Fowler-Nordheim tunneling for white
 electroluminescence. We would like to appreciate Dr. Yu. Ishikawa (Japan
 Fine Ceramic Center, Nagoya, Japan) and Prof. Sh.Muto
 (Nagoya University, Japan) for the opportunity of FTIR
 and EELS measurements. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electroluminescent properties of Tb-doped carbon-enriched silicon oxide Article published earlier |
| spellingShingle | Electroluminescent properties of Tb-doped carbon-enriched silicon oxide Tiagulskyi, S.I. Nazarov, A.N. Gordienk, S.O. Vasin, A.V. Rusavsky, A.V. Nazarova, T.M. Gomeniuk, Yu.V. Rudko, G.V. Lysenko, V.S. Rebohle, L. Voelskow, M. Skorupa, W. Koshka, Y. |
| title | Electroluminescent properties of Tb-doped carbon-enriched silicon oxide |
| title_full | Electroluminescent properties of Tb-doped carbon-enriched silicon oxide |
| title_fullStr | Electroluminescent properties of Tb-doped carbon-enriched silicon oxide |
| title_full_unstemmed | Electroluminescent properties of Tb-doped carbon-enriched silicon oxide |
| title_short | Electroluminescent properties of Tb-doped carbon-enriched silicon oxide |
| title_sort | electroluminescent properties of tb-doped carbon-enriched silicon oxide |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118346 |
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