Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers
The results of studies of the spectral characteristics of the m-n⁰-n-structure with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped AlGaAs layers are presented. It is experimentally revealed that own defects and oxygen impurities introduced into the thin act...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Saidova, R.A. Yakubov, A.A. 2017-05-30T17:00:31Z 2017-05-30T17:00:31Z 2008 Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, R.A. Saidova, A.A. Yakubov// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 26-28. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 42.79.Pw, 68.55.Ac https://nasplib.isofts.kiev.ua/handle/123456789/118592 The results of studies of the spectral characteristics of the m-n⁰-n-structure with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped AlGaAs layers are presented. It is experimentally revealed that own defects and oxygen impurities introduced into the thin active n-area, whose thickness is about the diffusion length, promote the greater photoresponse in the impurity spectral band (1.2 and 1.55 µm). At the same time, impurities present in GaInAs at the background level can be excited, although ineffectively, from the quasineutral part of the active region depleted by the blocking voltage. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers Article published earlier |
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Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers |
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Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Saidova, R.A. Yakubov, A.A. |
| title_short |
Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers |
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Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers |
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Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers |
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Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers |
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spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers |
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Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Saidova, R.A. Yakubov, A.A. |
| author_facet |
Yodgorova, D.M. Karimov, A.V. Giyasova, F.A. Saidova, R.A. Yakubov, A.A. |
| publishDate |
2008 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Article |
| description |
The results of studies of the spectral characteristics of the m-n⁰-n-structure
with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped
AlGaAs layers are presented. It is experimentally revealed that own defects and
oxygen impurities introduced into the thin active n-area, whose thickness is about the
diffusion length, promote the greater photoresponse in the impurity spectral band (1.2
and 1.55 µm). At the same time, impurities present in GaInAs at the background level
can be excited, although ineffectively, from the quasineutral part of the active region
depleted by the blocking voltage.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118592 |
| citation_txt |
Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, R.A. Saidova, A.A. Yakubov// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 26-28. — Бібліогр.: 7 назв. — англ. |
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| first_indexed |
2025-11-24T20:18:08Z |
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2025-11-24T20:18:08Z |
| _version_ |
1850495151698345984 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008. V. 11, N 1. P. 26-28.
© 2007, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
26
PACS 42.79.Pw, 68.55.Ac
Spectral photosensitivity of the m-n0-n structure
on the basis of epitaxial layers
D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, R.A. Saidova, A.A. Yakubov
Physical-Technical Institute of the Scientific Association "Physics-Sun",
Academy of Sciences of the Republic of Uzbekistan, 2B, Mavlyanov str., 700084 Tashkent, Uzbekistan
Phone: +998-71-1331271, fax: +998-71-1354291, e-mail: karimov@uzsci.net
Abstract. The results of studies of the spectral characteristics of the m-n0-n-structure
with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygen-
doped AlGaAs layers are presented. It is experimentally revealed that own defects and
oxygen impurities introduced into the thin active n-area, whose thickness is about the
diffusion length, promote the greater photoresponse in the impurity spectral band (1.2
and 1.55 µm). At the same time, impurities present in GaInAs at the background level
can be excited, although ineffectively, from the quasineutral part of the active region
depleted by the blocking voltage.
Keywords: spectral characteristics, epitaxial layer, photocurrent, photodiode, active
region, impurity.
Manuscript received 17.03.07; accepted for publication 07.02.08; published online 31.03.08.
1. Introduction
Development of both the global system of communication
with transmission of optical signals and wireless computer
nets induces new requirements to extend functional
resources and to raise photosensitivity and reliability. In
this aspect, the intense constructive and technological
researches are performed with the purpose of increasing
the detector diode limiting sensitivity and decreasing the
conversion losses [1, 2]. Schottky junction structures with
a thin active region (~ 1 µm) are created on the basis of
epitaxial layers of binary GaAs and InP generated on a
highly doped base. This allows increasing the limiting
sensitivity and the frequency range of photodiodes [3, 4].
Another issue is to obtain a sufficient photosensitivity in a
specified spectral range by applying a complex system of
solid solutions with predetermined properties and
guaranteed proportions.
In this work, we present the results of studies of the
spectral characteristics of the m-n0-n structure with a
base area produced on the basis of thin epitaxial
specified undoped GaInAs and oxygen-doped AlGaAs
layers grown on the highly doped n+GaAs base.
2. Experimental specimens and methods of research
Epitaxial layers such as Al0.2Ga0.8As and Ga0.95In0.05As
have been grown by the method of liquid epitaxy of Ga:
GaAs:Al(In) = 1850:150:11(16) solution-melt, so that
the layers proportion was specified during the process.
The layers proportion was also determined on the basis
of the spectral characteristics of the triple solid solution
and the behavior of its forbidden gap [5]. The growth of
epitaxial layers has been accomplished using a complex
system of liquid epitaxy [6] which allows one to grow
not only similar layers but also various heteroepitaxial
ones. By growing the epitaxial layers, we used oxygen-
doped nGaAs with 4⋅1015-cm−3 carrier density as a
source and a polycrystalline source with 7⋅1015-cm−3
carrier density for epitaxial layers of nGaInAs. In both
cases, the thickness of epitaxial layers amounted to
1.5−2 µm. On the basis of the grown heteroepitaxial
nAlGaAs-n+GaAs and nGaInAs-n+GaAs layers, we
produced photodiode m-n0-n+-structures. On the layer
side, the translucent rectifying contacts (60−70 Å) of Ag
have been formed by vacuum deposition, and the rear
side of the n+GaAs layer has been provided with ohmic
contacts of Sn+In structures whose area amounts to 15-
17 mm². The potential barrier height of Ag-n0AlGaAs is
0.52 eV, and the conversion height of Ag-n0GaInAs is
0.89 eV. The forbidden gap of n0Al0.2Ga0.8As:О layer is
~ 1.67 eV, and that of Ga0.95In0.05As ~ 1.32 eV. These
parameters have been determined with the purpose to
reveal the influence of oxygen and intrinsic defects of
indium (aluminum) layers [7] on the spectral charac-
teristics of the structure with metal-semiconductor
barrier. On the basis of the fabricated structures, the
spectral and current characteristics have been researched.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008. V. 11, N 1. P. 26-28.
© 2007, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
27
3. Experimental results and their discussion
As shown in Fig. 1, the spectral characteristics of m-n0-
n+-structures cover various optical ranges according to
the proportion of the base region. In case of n0AlGaAs
(curve 1), the photosensitive region begins from λ =
0.5 µm and continues up to 2 µm. The peak photo-
sensitivity is in compliance with intrinsic absorption. In
the region of near 1.5 µm, it is formed by photocarriers
excited from levels of the oxygen impurity loaded into
the heterolayer of AlGaAs.
In the case of the epitaxial n0GaInAs layer as a
base area, the photosensitivity is surveyed within the
intrinsic absorbing region in the narrow spectral range
0.9−0.94 µm (see Fig. 2, curve 1). At the same time, the
low photoresponse in the short-wave part of the
spectrum is caused by defects of the indium isovalent
impurity appeared as recombination centers of the
barrier region.
0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0
0
50
100
150
200
250
λ, mkm
Iph, a.u
1 U=0.05 V
2 U=0.1 V
3 U=0.2 V
4 U=0.5 V
Fig. 1. Spectral characteristics of the m-n0-n+ structure with
(−)Ag-n0AlGaAs-n+GaAs-(In+Sn)(+).
0,4 0,8 1,2 1,6 2,0 2,4
0,0
0,2
0,4
0,6
0,8
1,0
1,2
λ, mkm
Iph, a.u
1 0.1 V
2 0.2 V
3 0.3 V
4 0.4 V
Fig. 2. Spectral characteristics of the m-n0-n+ structure with
(−)Ag-n0GaInAs-n+GaAs-(In+Sn)(+).
0,0 0,4 0,8 1,2 1,6 2,0
1,2
1,6
2,0
2,4
2,8
3,2
3,6 2
n
U, V
1
1 Ag-n0AlGaAs-n+GaAs
2 Ag-n0GaInAs-n+GaAs
Fig. 3. Dependence of dark current exponents on the blocking
voltage.
As the electric field intensity increases, the
photoresponse of the Ag-n0AlGaAs-n+GaAs structure
will grow within the whole spectral range (Fig. 1,
curves 3 and 4), but to a greater extent within the long-
wave region, particularly in the impurity band (1.55 µm).
In the Ag-n0GaInAs-n+GaAs structure, the photores-
ponse marginally rises in the long-wave region of the
spectrum due to the presence of uncontrolled impurities.
The reduction of the photoresponse growth with increase
in the voltage can be related to the increase of the
tunneling current via the barrier, which is confirmed by a
sharp increase of the exponent of the dark current
dependence on the voltage U, )/exp(~ nkTqUI (Fig. 3,
curve 2).
In the field of an intensity of 0−0.5 V, the input
resistance of the m-n0-n+ structure remains at the level of
1−10 GOhm with a capacity of 5−7 pF that testifies to
high-frequency properties of the structures under study.
4. Conclusion
Thus, the performed researches show that oxygen
impurities providing deep lying levels and introduced as
a doping impurity into the thin active region (whose
thickness is about the diffusion length) of the structure
with the metal-semiconductor barrier promote obtaining
a greater photocurrent in the impurity area of the
spectrum as compared with that in the area of intrinsic
absorption. Moreover, the impurities comparable with
the background are slightly excited from the quasineutral
part of the active region depleted by a blocking voltage,
rather than directly from the surface.
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008. V. 11, N 1. P. 26-28.
© 2007, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
28
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