Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment

• Datum: 2009
• Hauptverfasser: Konakova, R.V., Kladko, V.P., Lytvyn, O.S., Okhrimenko, O.B., Konoplev, B.G., Svetlichnyi, A.M., Lissotschenko, V.N.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Schriftenreihe: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118876
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment / R.V. Konakova, V.P. Kladko, O.S. Lytvyn, O.B. Okhrimenko, B.G. Konoplev, A.M. Svetlichnyi, V.N. Lissotschenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 284-286. — Бібліогр.: 7 назв. — англ.

We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure at their surface.