Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniques, we showed that thermal annealings at Т = 300...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2006 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121434 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures / N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.F. Mitin, E.V. Mitin, O.S. Lytvyn, L.M. Kapitanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 58-60. — Бібліогр.: 2 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862656907649482752 |
|---|---|
| author | Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Mitin, V.F. Mitin, E.V. Lytvyn, O.S. Kapitanchuk, L.M. |
| author_facet | Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Mitin, V.F. Mitin, E.V. Lytvyn, O.S. Kapitanchuk, L.M. |
| citation_txt | Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures / N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.F. Mitin, E.V. Mitin, O.S. Lytvyn, L.M. Kapitanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 58-60. — Бібліогр.: 2 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniques, we showed that thermal annealings at Т = 300 °С (for 60 s) and 360 °С (for 30 s) do not change the phase composition of the metallization. This ensures thermal stability of the contacts and Hall sensors made on the basis of Au–Ti–n-InSb–GaAs(i) structures.
|
| first_indexed | 2025-12-02T05:37:36Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121434 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T05:37:36Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Mitin, V.F. Mitin, E.V. Lytvyn, O.S. Kapitanchuk, L.M. 2017-06-14T10:52:32Z 2017-06-14T10:52:32Z 2006 Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures / N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.F. Mitin, E.V. Mitin, O.S. Lytvyn, L.M. Kapitanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 58-60. — Бібліогр.: 2 назв. — англ. 1560-8034 PACS 81.05.Rm https://nasplib.isofts.kiev.ua/handle/123456789/121434 We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniques, we showed that thermal annealings at Т = 300 °С (for 60 s) and 360 °С (for 30 s) do not change the phase composition of the metallization. This ensures thermal stability of the contacts and Hall sensors made on the basis of Au–Ti–n-InSb–GaAs(i) structures. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures Article published earlier |
| spellingShingle | Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Mitin, V.F. Mitin, E.V. Lytvyn, O.S. Kapitanchuk, L.M. |
| title | Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures |
| title_full | Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures |
| title_fullStr | Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures |
| title_full_unstemmed | Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures |
| title_short | Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures |
| title_sort | ohmic contacts to hall sensors based on n-insb-gaas(i) heterostructures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121434 |
| work_keys_str_mv | AT boltovetsns ohmiccontactstohallsensorsbasedonninsbgaasiheterostructures AT konakovarv ohmiccontactstohallsensorsbasedonninsbgaasiheterostructures AT kudrykyaya ohmiccontactstohallsensorsbasedonninsbgaasiheterostructures AT mileninvv ohmiccontactstohallsensorsbasedonninsbgaasiheterostructures AT mitinvf ohmiccontactstohallsensorsbasedonninsbgaasiheterostructures AT mitinev ohmiccontactstohallsensorsbasedonninsbgaasiheterostructures AT lytvynos ohmiccontactstohallsensorsbasedonninsbgaasiheterostructures AT kapitanchuklm ohmiccontactstohallsensorsbasedonninsbgaasiheterostructures |