Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniques, we showed that thermal annealings at Т = 300...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2006 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121434 |
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| Zitieren: | Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures / N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.F. Mitin, E.V. Mitin, O.S. Lytvyn, L.M. Kapitanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 58-60. — Бібліогр.: 2 назв. — англ. |
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Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Mitin, V.F. Mitin, E.V. Lytvyn, O.S. Kapitanchuk, L.M. 2017-06-14T10:52:32Z 2017-06-14T10:52:32Z 2006 Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures / N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.F. Mitin, E.V. Mitin, O.S. Lytvyn, L.M. Kapitanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 58-60. — Бібліогр.: 2 назв. — англ. 1560-8034 PACS 81.05.Rm https://nasplib.isofts.kiev.ua/handle/123456789/121434 We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniques, we showed that thermal annealings at Т = 300 °С (for 60 s) and 360 °С (for 30 s) do not change the phase composition of the metallization. This ensures thermal stability of the contacts and Hall sensors made on the basis of Au–Ti–n-InSb–GaAs(i) structures. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures |
| spellingShingle |
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Mitin, V.F. Mitin, E.V. Lytvyn, O.S. Kapitanchuk, L.M. |
| title_short |
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures |
| title_full |
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures |
| title_fullStr |
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures |
| title_full_unstemmed |
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures |
| title_sort |
ohmic contacts to hall sensors based on n-insb-gaas(i) heterostructures |
| author |
Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Mitin, V.F. Mitin, E.V. Lytvyn, O.S. Kapitanchuk, L.M. |
| author_facet |
Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Milenin, V.V. Mitin, V.F. Mitin, E.V. Lytvyn, O.S. Kapitanchuk, L.M. |
| publishDate |
2006 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniques, we showed that thermal annealings at Т = 300 °С (for 60 s) and 360 °С (for 30 s) do not change the phase composition of the metallization. This ensures thermal stability of the contacts and Hall sensors made on the basis of Au–Ti–n-InSb–GaAs(i) structures.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121434 |
| citation_txt |
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures / N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.F. Mitin, E.V. Mitin, O.S. Lytvyn, L.M. Kapitanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 58-60. — Бібліогр.: 2 назв. — англ. |
| work_keys_str_mv |
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| first_indexed |
2025-12-02T05:37:36Z |
| last_indexed |
2025-12-02T05:37:36Z |
| _version_ |
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