Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts

von Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Sheremet, V.N.
Veröffentlicht 2010

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

von Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.
Veröffentlicht 2002

Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films

von Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.
Veröffentlicht 2012

Technology and experimental studies of contacts for microwave diodes based on interstitial phases

von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.
Veröffentlicht 2001

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

von Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V.
Veröffentlicht 2011

Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

von Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.
Veröffentlicht 2001

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN

von Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Zhigunov, V.S., Konakova, R.V., Panteleev, V.N., Sachenko, A.V., Sheremet, V.N.
Veröffentlicht 2013

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures

von Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.
Veröffentlicht 2006

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

von Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.
Veröffentlicht 2008

A silicon carbide thermistor

von Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, P.M., Milenin, V.V., Mitin, V.F., Mitin, E.V.
Veröffentlicht 2006

Особливості формування омічних контактів до n+-InN

von Sai, P. O., Safryuk-Romanenko, N. V., But, D. B., Cywiński, G., Boltovets, N. S., Brunkov, P. N., Jmeric, N. V., Ivanov, S. V., Shynkarenko, V. V.
Veröffentlicht 2019

Contacts for silicon IMPATT and pick-off diodes

von Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.
Veröffentlicht 2000

Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs

von Venger, E.F., Beliaev, A.A., Boltovets, N.S., Ermolovich, I.B., Ivanov, V.N., Konakova, R.V., Milenin, V.V., Voitsikhovski, D.I., Figielski, T., Makosa, A.
Veröffentlicht 1999

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes

von Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.
Veröffentlicht 2007

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes

von Romanets, P.M., Belyaev, A.E., Sachenko, А.V., Boltovets, N.S., Basanets, V.V., Konakova, R.V., Slipokurov, V.S., Khodin, А.А., Pilipenko, V.А., Shynkarenko, V.V., Kudryk, Ya.Ya.
Veröffentlicht 2016

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
Veröffentlicht 2004

The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts

von Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Konakova, R.V., Kladko, V.P., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Korostinskaya, T.V., Ataubaeva, A.B., Nevolin, P.V.
Veröffentlicht 2010

Development of high-stable contact systems to gallium nitride microwave diodes

von Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.
Veröffentlicht 2007

Role of dislocations in formation of ohmic contacts to heavily doped n-Si

von Belyaev, A.E., Pilipenko, V.A., Anischik, V.M., Petlitskaya, T.V., Klad’ko, V.P., Konakova, R.V., Boltovets, N.S., Korostinskaya, T.V., Kapitanchuk, L.M., Kudryk, Ya.Ya., Vinogradov, A.O., Sheremet, V.N.
Veröffentlicht 2013

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

von Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.
Veröffentlicht 2012