Харвестер відкритої науки НАН України

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts

за авторством Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Sheremet, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

за авторством Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films

за авторством Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

за авторством Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Technology and experimental studies of contacts for microwave diodes based on interstitial phases

за авторством Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

за авторством Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN

за авторством Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Zhigunov, V.S., Konakova, R.V., Panteleev, V.N., Sachenko, A.V., Sheremet, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures

за авторством Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

A silicon carbide thermistor

за авторством Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, P.M., Milenin, V.V., Mitin, V.F., Mitin, E.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

за авторством Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

Особливості формування омічних контактів до n+-InN

за авторством Sai, P. O., Safryuk-Romanenko, N. V., But, D. B., Cywiński, G., Boltovets, N. S., Brunkov, P. N., Jmeric, N. V., Ivanov, S. V., Shynkarenko, V. V.
Опубліковано 2019

Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs

за авторством Venger, E.F., Beliaev, A.A., Boltovets, N.S., Ermolovich, I.B., Ivanov, V.N., Konakova, R.V., Milenin, V.V., Voitsikhovski, D.I., Figielski, T., Makosa, A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Contacts for silicon IMPATT and pick-off diodes

за авторством Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes

за авторством Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Диоды Ганна из InP с катодным контактом, инжектирующим горячие электроны. Ч. 1. Межфазные взаимодействия в катодных контактах...

за авторством Boltovets, N. S., Ivanov, V. N., Kovtonyuk, V. M., Rayevskaya, N. S., Belyaev, A. E., Bobyl, A. V., Konakova, R. V., Kudryk, Ya. Ya., Milenin, V. V., Novitskiy, C. V., Sheremet, V. N.
Опубліковано 2010

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes

за авторством Romanets, P.M., Belyaev, A.E., Sachenko, А.V., Boltovets, N.S., Basanets, V.V., Konakova, R.V., Slipokurov, V.S., Khodin, А.А., Pilipenko, V.А., Shynkarenko, V.V., Kudryk, Ya.Ya.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

за авторством Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Development of high-stable contact systems to gallium nitride microwave diodes

за авторством Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts

за авторством Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Konakova, R.V., Kladko, V.P., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Korostinskaya, T.V., Ataubaeva, A.B., Nevolin, P.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

за авторством Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2012)