An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications
An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite order of continuity what assures smooth transitions between different operatio...
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| Date: | 2006 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121592 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications / Yu. Houk, B. Iniguez, D. Flandre, A. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 43-54. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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nasplib_isofts_kiev_ua-123456789-1215922025-02-09T12:20:57Z An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications Houk, Yu. Iniguez, B. Flandre, D. Nazarov, A. An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite order of continuity what assures smooth transitions between different operation regimes of the transistor. This model is valid for all regimes of normal operation, demonstrates proper description of high-temperature behavior of the subthreshold and off-state current. The model characteristics show a good agreement with the experimental data for temperatures up to 300 °C. The work was performed in the frame of SPRING project (project #IST-1999-12342), and also was partially supported by NATO CLG (PST CLG 979999). The authors are thankful to T.E. Rudenko, V. Kilchytska and A. Tuor for helpful discussions. 2006 Article An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications / Yu. Houk, B. Iniguez, D. Flandre, A. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 43-54. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 85.30.Tv, 85.30.De https://nasplib.isofts.kiev.ua/handle/123456789/121592 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
| description |
An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite order of continuity what assures smooth transitions between different operation regimes of the transistor. This model is valid for all regimes of normal operation, demonstrates proper description of high-temperature behavior of the subthreshold and off-state current. The model characteristics show a good agreement with the experimental data for temperatures up to 300 °C. |
| format |
Article |
| author |
Houk, Yu. Iniguez, B. Flandre, D. Nazarov, A. |
| spellingShingle |
Houk, Yu. Iniguez, B. Flandre, D. Nazarov, A. An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Houk, Yu. Iniguez, B. Flandre, D. Nazarov, A. |
| author_sort |
Houk, Yu. |
| title |
An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications |
| title_short |
An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications |
| title_full |
An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications |
| title_fullStr |
An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications |
| title_full_unstemmed |
An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications |
| title_sort |
analytical accumulation mode soi pmosfet model for high-temperature analog applications |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121592 |
| citation_txt |
An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications / Yu. Houk, B. Iniguez, D. Flandre, A. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 43-54. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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