Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis
A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis...
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| Date: | 2017 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2017
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| Series: | Functional Materials |
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/136789 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis / B.V. Kushnir, Z.D. Kovalyuk, V.M. Katerynchuk, V.V. Netyaga, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 3. — С. 372-375. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis of electric and photovoltaic characteristics of the GP, a high-quality zone diagram was constructed. The region of spectral photosensitivity of p-FeIn₂Se₄-n-In₄Se₃ GP which is in the range 0.7-1.3 eV, is established. |
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