Ion beam system for nanotrimming of functional microelectronics layers
This paper concerns with investigation of the trimming process which uses ion beam etching for high-precision adjustment of the thickness of functional microelectronics layers. The layer deposited on the substrate is etched by scanning focused ion beam; its position and power is regulated accordin...
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| Datum: | 2011 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2011
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| Schriftenreihe: | Вопросы атомной науки и техники |
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/90892 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Ion beam system for nanotrimming of functional microelectronics layers / A.A. Bizyukov, I.A. Bizyukov, O.I. Girka, K.N. Sereda, V.V. Sleptsov, M. Gutkin, S. Mishin // Вопросы атомной науки и техники. — 2011. — № 1. — С. 110-112. — Бібліогр.: 3 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | This paper concerns with investigation of the trimming process which uses ion beam etching for high-precision
adjustment of the thickness of functional microelectronics layers. The layer deposited on the substrate is etched by
scanning focused ion beam; its position and power is regulated according to the topography of layer non-uniformity.
The trimming allows to create pre-defined topography of the non-uniformity with accuracy down to 4 Å and decrease
the roughness of the surface. |
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