Харвестер відкритої науки НАН України

The influence of ion implantation by phosphorous on structural changes in porous silicon

за авторством Swiatek, Z., Lytvynchuk, I., Fodchuk, I.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Determination of surface parameters of solids by methods of X-ray total external reflection

за авторством Balovsyak, S.V., Fodchuk, I.M., Lytvyn, P.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Determination of structural homogeneity of synthetic diamonds from analysis of Kikuchi lines intensity distribution

за авторством Fodchuk, I., Balovsyak, S., Borcha, M., Garabazhiv, Ya., Tkach, V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon

за авторством Gutsulyak, B.I., Oliynych-Lysyuk, A.V., Fodchuk, I.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Evolution of defective structure of the irradiated silicon during natural ageing

за авторством Fodchuk, I.M., Gutsulyak, T.G., Himchynsky, O.G., Olijnich-Lysjuk, A.V., Raransky, N.D.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group

за авторством Vlasov, A.P., Bonchyk, A.Yu., Fodchuk, I.M., Barcz, A., Swiatek, Z.T., Zaplitnyy, R.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Some characteristics of semiconductor HgCdMnZnTe solid solution crystals

за авторством Popenko, N., Ivanchenko, I., Brovenko, I., Zhigalov, A., Karelin, S., Gorbatyuk, I., Ostapov, S., Dremlyuzhenko, S., Rarenko, I., Zaplitnyi, R., Fodchuk, I., Deibuk, V.G.
Опубліковано в: Functional Materials (2006)

Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells

за авторством Fodchuk, I.M., Gevyk, V.B., Gimchinsky, O.G., Kislovskii, E.N., Kroytor, O.P., Molodkin, V.B., Olihovskii, S.I., Pavelescu, E.M., Pessa, M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions

за авторством Fodchuk, I.M., Gutsuliak, I.I., Zaplitniy, R.A., Balovsyak, S.V., Yaremiy, I.P., Bonchyk, O.Yu., Savitskiy, G.V., Syvorotka, I.M., Lytvyn, P.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Dynamical Theory of Triple-Crystal X-ray Diffractometry and Characterization of Microdefects and Strains in Imperfect Single Crystals

за авторством Molodkin, V.B., Olikhovskii, S.I., Len, E.G., Kyslovskyy, Ye.M., Reshetnyk, O.V., Vladimirova, T.P., Sheludchenko, B.V., Skakunova, E.S., Lizunov, V.V., Kochelab, E.V., Fodchuk, I.M., Klad’ko, V.P.
Опубліковано в: Металлофизика и новейшие технологии (2016)