Search Results - Boltovets, M.S.

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  1. 1
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    Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes by Romanets, P.M., Konakova, R.V., Boltovets, M.S., Basanets, V.V., Kudryk, Ya.Ya., Slipokurov, V.S.

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  2. 2
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    Плазмохимическое травление эпитаксиальных структур нитрида галлия by Borisenko, A. G., Polozov, B. P., Fedorovich, O. A., Boltovets, M. S., Ivanov, V. N., Sveschnikov, Yu. N.

    Published 2005
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  3. 3
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    Формирование мезаструктур 4НSiC p–i–n-диодов методом ионно-плазменного травления by Boltovets, M. S., Borisenko, A. G., Ivanov, V. N., Fedorovich, О. А., Krivutsa, V. A., Polozov, B. P.

    Published 2009
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  4. 4
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    Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity by Boltovets, M.S., Ivanov, V.M., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Shynkarenko, V.V., Sheremet, V.M., Sveshnikov, Yu.N., Yavich, B.S.

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