Formation of silicon nanoclusters in buried ultra-thin oxide layers by Oberemok, O.S., Litovchenko, V.G., Gamov, D.V., Popov, V.G., Melnik, V.P., Gudymenko, O.Yo., Nikirin, V.A., Khatsevich, І.M.

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Strain relaxation in thin Si₁-ₓ-yGeₓCy layers on Si substrates by Valakh, M.Ya., Gamov, D.V., Dzhagan, V.M., Lytvyn, O.S., Melnik, V.P., Romanjuk, B.M., Popov, V.G., Yukhymchuk, V.O.

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Дослiдження рекомбiнацiйних характеристик Cz-кремнiю, iмплантованого iонами залiза by Gamov, D. V., Gudymenko, O. I., Kladko, V. P., Litovchenko, V. G., Melnik, V. P., Oberemok, O. S., Popov, V. G., Polishchuk, Yu. O., Romaniuk, B. M., Chernenko, V. V., Nasekа, V. M.

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