Open Science Harvester of NAS of Ukraine

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

by Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance

by Baranskyy, P.I., Gaydar, G.P., Litovchenko, P.G.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Peculiarities of optical absorption near-edge in irradiated GaP:Te

by Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.
Published in Functional Materials (2010)

Радиационная модификация структурной сетки халькогенидного стекла

by Kavetskyy, T. S., Shpotyuk, O. I., Litovchenko, P. G., Tsmots, V. M.
Published 2008

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

by Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Peculiarities of neutron irradiation influence on GaP light-emitting structures

by Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

The radiation hardness of pulled silicon doped with germanium

by Dolgolenko, A.P., Gaidar, G.P., Varentsov, M.D., Litovchenko, P.G.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Radiation influence on characteristics of GaP light emitting diodes

by Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.
Published in Functional Materials (2009)

Radiative recombination in initial and electron-irradiated GaP crystals

by Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Influence of structural defects on photoconductivity of zinc diphosphide

by Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects

by Dubovyi, V.K., Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ya., Tartachnik, V.P.
Published in Functional Materials (2005)

Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers

by Litovchenko, P.G., Pavlovska, N.T., Pavlovskyy, Yu.V., Ugrin, Yu.O., Luka, G., Ostrovskyy, I.P.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Nuclear irradiation-induced superconductivity in the binary semiconductor InAs

by Kаrpenko, А.Ya., Litovchenko, P.G., Shevtsova, О.N., Sugakov, V.I., Vikhlii, G.A.
Published in Физика низких температур (2003)

Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon

by Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Published in Вопросы атомной науки и техники (2017)

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

by Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors

by Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Published in Вопросы атомной науки и техники (2016)

Seebeck’s effect in p-SiGe whisker samples

by Dolgolenko, A.P., Druzhinin, A.A., Karpenko, A.Ya., Nichkalo, S.I., Ostrovsky, I.P., Litovchenko, P.G., Litovchenko, A.P.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Основні положення концепції нового багато цільового дослідницького ядерного реактора

by Vishnevsky, I., Davidovsky, V., Grinik, E., Lysenko, M., Litovchenko, P., Lobach, Yu., Makarovsky, V., Pavlovich, V., Svarichevskaya, E., Trishin, V., Shevel, V.
Published 2006

Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics

by Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Радиационная стойкость нитевидных кристаллов SiGe, используемых для сенсоров фи­зи­чес­ких величин...

by Druzhinin, A. A., Ostrovskiy, I. P., Khoverko, Yu. N., Litovchenko, P. G., Pavlovska, N. T., Pavlovskiy, Yu. V., Tsmots, V. M., Povarchuk, V. Yu.
Published 2011