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The kinetic of point defect transformation during the annealing process in electron-irradiated silicon by Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance by Baranskyy, P.I., Gaydar, G.P., Litovchenko, P.G.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

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Peculiarities of optical absorption near-edge in irradiated GaP:Te by Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.

Published in Functional Materials (2010)

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Радиационная модификация структурной сетки халькогенидного стекла by Kavetskyy, T. S., Shpotyuk, O. I., Litovchenko, P. G., Tsmots, V. M.

Published 2008

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Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons by Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

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Peculiarities of neutron irradiation influence on GaP light-emitting structures by Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Radiative recombination in initial and electron-irradiated GaP crystals by Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

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Radiation influence on characteristics of GaP light emitting diodes by Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.

Published in Functional Materials (2009)

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Influence of structural defects on photoconductivity of zinc diphosphide by Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

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Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects by Dubovyi, V.K., Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ya., Tartachnik, V.P.

Published in Functional Materials (2005)

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Nuclear irradiation-induced superconductivity in the binary semiconductor InAs by Kаrpenko, А.Ya., Litovchenko, P.G., Shevtsova, О.N., Sugakov, V.I., Vikhlii, G.A.

Published in Физика низких температур (2003)

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Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons by Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon by Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.

Published in Вопросы атомной науки и техники (2017)

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Seebeck’s effect in p-SiGe whisker samples by Dolgolenko, A.P., Druzhinin, A.A., Karpenko, A.Ya., Nichkalo, S.I., Ostrovsky, I.P., Litovchenko, P.G., Litovchenko, A.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons by Vernydub, R.M., Kyrylenko, O.I., Konoreva, O.V., Olikh, Ya.M., Litovchenko, P.G., Pavlovskyy, Yu.V., Potera, P., Tartachnyk, V.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2020)

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Радиационная стойкость нитевидных кристаллов SiGe, используемых для сенсоров физических величин... by Druzhinin, A. A., Ostrovskiy, I. P., Khoverko, Yu. N., Litovchenko, P. G., Pavlovska, N. T., Pavlovskiy, Yu. V., Tsmots, V. M., Povarchuk, V. Yu.

Published 2011

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Semiconductor sensors for dosimetry of epithermal neutrons by Litovchenko, P.G., Moss, R., Stecher-Rasmussen, F., Appelman, K., Barabash, L.I., Kibkalo, T.I., Lastovetsky, V.F., Litovchenko, A.P., Pinkovska, M.B.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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Influence of neutron irradiation on elctrooptical and structural properties of silicon by Groza, A.A., Venger, E.F., Varnina, V.I., Holiney, R.Yu., Litovchenko, P.G., Matveeva, L.A., Litovchenko, A.P., Sugakov, V.I., Shmatko, G.G.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

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Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide by Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

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Search Results - Litovchenko, P.

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon by Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.

Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance by Baranskyy, P.I., Gaydar, G.P., Litovchenko, P.G.

Peculiarities of optical absorption near-edge in irradiated GaP:Te by Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.

Радиационная модификация структурной сетки халькогенидного стекла by Kavetskyy, T. S., Shpotyuk, O. I., Litovchenko, P. G., Tsmots, V. M.

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons by Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.

Peculiarities of neutron irradiation influence on GaP light-emitting structures by Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.

Radiative recombination in initial and electron-irradiated GaP crystals by Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.

Radiation influence on characteristics of GaP light emitting diodes by Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.

Influence of structural defects on photoconductivity of zinc diphosphide by Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.

Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects by Dubovyi, V.K., Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ya., Tartachnik, V.P.

Nuclear irradiation-induced superconductivity in the binary semiconductor InAs by Kаrpenko, А.Ya., Litovchenko, P.G., Shevtsova, О.N., Sugakov, V.I., Vikhlii, G.A.

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons by Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.

Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon by Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.

Seebeck’s effect in p-SiGe whisker samples by Dolgolenko, A.P., Druzhinin, A.A., Karpenko, A.Ya., Nichkalo, S.I., Ostrovsky, I.P., Litovchenko, P.G., Litovchenko, A.P.

Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons by Vernydub, R.M., Kyrylenko, O.I., Konoreva, O.V., Olikh, Ya.M., Litovchenko, P.G., Pavlovskyy, Yu.V., Potera, P., Tartachnyk, V.P.

Semiconductor sensors for dosimetry of epithermal neutrons by Litovchenko, P.G., Moss, R., Stecher-Rasmussen, F., Appelman, K., Barabash, L.I., Kibkalo, T.I., Lastovetsky, V.F., Litovchenko, A.P., Pinkovska, M.B.

Influence of neutron irradiation on elctrooptical and structural properties of silicon by Groza, A.A., Venger, E.F., Varnina, V.I., Holiney, R.Yu., Litovchenko, P.G., Matveeva, L.A., Litovchenko, A.P., Sugakov, V.I., Shmatko, G.G.

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide by Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.

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