Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing by Okhrimenko, O.B.

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A model for non-thermal action of microwave radiation on oxide film/semiconductor structures by Okhrimenko, O.B.

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Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film by Okhrimenko, O.B

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Electroluminescence powdered ZnS:Cu obtained by one-stage synthesis by Bacherikov, Yu.Yu., Zhuk, A.G., Okhrimenko, O.B., Kardashov, D.L., Kozitskiy, S.V.

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Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis by Bacherikov, Yu.Yu., Okhrimenko, O.B., Zhuk, A.G., Kurichka, R.V., Gilchuk, A.V.

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Conductivity of molecular semiconductor material based on monomeric and polymeric methacroylacetophenone by Berezhnytska, O.S., Trunova, O.K., Gudyma, А.О., Smirnov, А.B., Okhrimenko, O.B., Bacherikov, Yu.Yu.

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Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films by Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.

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The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis by Bacherikov, Yu.Yu., Zhuk, A.G., Optasyuk, S.V., Okhrimenko, O.B., Kardashov, K.D., Kozitskiy, S.V.

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Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS by Bacherikov, Yu.Yu., Zhuk, A.G., Okhrimenko, O.B., Kardashov, D.L., Kozitskiy, S.V., Kidalov, V.V.

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Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures by Bacherikov, Yu.Yu., Konakova, R.V., Kolyadina, E.Yu., Kocherov, A.N., Okhrimenko, O.B., Svetlichnyi, A.M.

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Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS by Bacherikov, Yu.Yu., Zhuk, A.G., Okhrimenko, O.B., Kardashov, D.L., Kozitskiy, S.V., Kidalov, V.V.

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Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures by Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Berezovska, N.I., Kapitanchuk, L.M., Svetlichnyi, A.M.

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Effect of the doping method on luminescent properties of ZnS:Ag by Bacherikov, Yu.Yu., Zhuk, A.G., Okhrimenko, O.B., Pecherskaya-Gromadskaya, E.Yu., Kidalov, V.V., Optasyuk, S.V.

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Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment by Konakova, R.V., Kladko, V.P., Lytvyn, O.S., Okhrimenko, O.B., Konoplev, B.G., Svetlichnyi, A.M., Lissotschenko, V.N.

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Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates by Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Berezovska, N.I., Lytvyn, O.S., Kapitanchuk, L.M., Svetlichnyi, A.M.

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Luminescent properties of fine-dispersed self-propagating high-temperature synthesized ZnS:Cu,Mg by Bacherikov, Yu.Yu., Zhuk, A.G., Kurichka, R.V., Okhrimenko, O.B., Gilchuk, A.V., Shcherbyna, O.V., Herkalyuk, M.V.

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Influence of microwave radiation on relaxation processes in silicon carbide by Bacherikov, Yu.Yu., Goroneskul, V.Yu., Gudymenko, O.Yo., Kladko, V.P., Kolomys, O.F., Krishchenko, I.M., Okhrimenko, O.B., Strelchuk, V.V.

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Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates by Bacherikov, Yu.Yu., Dmitruk, N.L., Konakova, R.V., Kolomys, O.F., Okhrimenko, O.B., Strelchuk, V.V., Lytvyn, O.S., Kapitanchuk, L.M., Svetlichnyi, A.M.

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Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves by Vakhnyak, N.D., Lotsko, O.P., Budzulyak, S.I., Demchyna, L.A., Korbutyak, D.V., Konakova, R.V., Red’ko, R.A., Okhrimenko, O.B., Berezovska, N.I.

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