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Shutov, S.V.
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Shutov, S.V.
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Shutov, S.V.
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1
Crystallization mechanism control during epitaxy from solution-melt
by
Baganov, Ye.O.
,
Shutov, S.V.
Published in
Functional Materials
(2006)
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2
Simulation of strain fields in GaSb/InAs heteroepitaxial system
by
Shutov, S.V.
,
Baganov, Ye.A.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2006)
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3
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase
by
Shutov, S.V.
,
Baganov, Ye.A.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2006)
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Select result number 4
4
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
by
Shutov, S.V.
,
Shtan’ko, A.D.
,
Kurak, V.V.
,
Litvinova, M.B.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2007)
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5
Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide
by
Litvinova, M.B.
,
Shutov, S.V.
,
Shtan`ko, A.D.
,
Kurak, V.V.
Published in
Functional Materials
(2006)
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6
Поліпшення параметрів кремнієвих варикапів при використанні лазерного гетерування
by
Vikulin, I. M.
,
Litvinenko, V. N.
,
Shutov, S. V.
,
Maronchuk, A. I.
,
Demenskiy, A. N.
,
Glukhova, V. I.
Published 2018
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7
Enhancing parameters of silicon varactors using laser gettering
by
Vikulin, I.M.
,
Litvinenko, V.N.
,
Shutov, S.V.
,
Maronchuk, A.I.
,
Demenskiy, A.N.
,
Glukhova, V.I.
Published in
Технология и конструирование в электронной аппаратуре
(2018)
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8
Исследование термометрических характеристик GaP-диодов p+–n-типа
by
Krasnov, V. A.
,
Shwarts, Yu. M.
,
Shwarts, М. M.
,
Kopko, D. P.
,
Erohin, S. Yu.
,
Fonkich, A. М.
,
Shutov, S. V.
,
Sypko, N. I.
Published 2008
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Related Subjects
GaP
diode
gettering
impurities
reverse current
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silicon
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Технологические процессы и оборудование
варикап
гетерування
диод
домішки
зворотний струм
кремній
сенсор
температура