Search Results - Shutov, S.V.

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  1. 1
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    Simulation of strain fields in GaSb/InAs heteroepitaxial system by Shutov, S.V., Baganov, Ye.A.

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  2. 2
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    Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase by Shutov, S.V., Baganov, Ye.A.

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  3. 3
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    Crystallization mechanism control during epitaxy from solution-melt by Baganov, Ye.O., Shutov, S.V.

    Published in Functional Materials (2006)
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  4. 4
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    Determination of crystallization conditions of Ge/GaAs heterostructures in the scanning LPE method by Tsybulenko, V.V., Shutov, S.V., Yerochin, S.Yu.

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  5. 5
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    Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing by Shutov, S.V., Shtan’ko, A.D., Kurak, V.V., Litvinova, M.B.

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  6. 6
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    Поліпшення параметрів кремнієвих варикапів при використанні лазерного гетерування by Vikulin, I. M., Litvinenko, V. N., Shutov, S. V., Maronchuk, A. I., Demenskiy, A. N., Glukhova, V. I.

    Published 2018
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  7. 7
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    Исследование термометрических характеристик GaP-диодов p+–n-типа by Krasnov, V. A., Shwarts, Yu. M., Shwarts, М. M., Kopko, D. P., Erohin, S. Yu., Fonkich, A. М., Shutov, S. V., Sypko, N. I.

    Published 2008
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