Харвестер відкритої науки НАН України

Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells

von Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Behaviour of manganese impurity in β-ZnP₂

von Kakazej, M., Kudin, A., Pinkovs’ka, M., Tartachnyk, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Peculiarities of optical absorption near-edge in irradiated GaP:Te

von Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.
Veröffentlicht in Functional Materials (2010)

Influence of complex defects on electrophysical properties of GaP light emitting diodes

von Konoreva, O., Malyj, E., Mamykin, S., Petrenko, I., Pinkovska, M., Tartachnyk, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Peculiarities of neutron irradiation influence on GaP light-emitting structures

von Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Radiation influence on characteristics of GaP light emitting diodes

von Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.
Veröffentlicht in Functional Materials (2009)

Radiative recombination in initial and electron-irradiated GaP crystals

von Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Influence of structural defects on photoconductivity of zinc diphosphide

von Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Ultrasound influence on exciton emission of GaP light diodes

von Gontaruk, O.M., Khivrych, V.I., Pinkovska, M.B., Tartachnyk, V.P., Olikh, Ya.M., Vernydub, R.M., Opilat, V.Ya.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Low doses effect in GaP light-emitting diodes

von Hontaruk, O.M., Konoreva, O.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Radkevych, O.I., Tartachnyk, V.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons

von Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity

von Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics

von Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)