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Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells by Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

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Behaviour of manganese impurity in β-ZnP₂ by Kakazej, M., Kudin, A., Pinkovs’ka, M., Tartachnyk, V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

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Peculiarities of optical absorption near-edge in irradiated GaP:Te by Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.

Published in Functional Materials (2010)

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Influence of complex defects on electrophysical properties of GaP light emitting diodes by Konoreva, O., Malyj, E., Mamykin, S., Petrenko, I., Pinkovska, M., Tartachnyk, V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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Peculiarities of neutron irradiation influence on GaP light-emitting structures by Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Radiative recombination in initial and electron-irradiated GaP crystals by Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

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Radiation influence on characteristics of GaP light emitting diodes by Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.

Published in Functional Materials (2009)

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Self-organization in irradiated semiconductor crystals caused by thermal annealing by Zavada, M., Konoreva, O., Lytovchenko, P., Opilat, V., Pinkovska, M., Radkevych, O., Tartachnyk, V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2018)

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Influence of structural defects on photoconductivity of zinc diphosphide by Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

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Ultrasound influence on exciton emission of GaP light diodes by Gontaruk, O.M., Khivrych, V.I., Pinkovska, M.B., Tartachnyk, V.P., Olikh, Ya.M., Vernydub, R.M., Opilat, V.Ya.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

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Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons by Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity by Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

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Low doses effect in GaP light-emitting diodes by Hontaruk, O.M., Konoreva, O.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Radkevych, O.I., Tartachnyk, V.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

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Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics by Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

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Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons by Vernydub, R.M., Kyrylenko, O.I., Konoreva, O.V., Olikh, Ya.M., Litovchenko, P.G., Pavlovskyy, Yu.V., Potera, P., Tartachnyk, V.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2020)

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Search Results - Tartachnyk, V.

Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells by Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.

Behaviour of manganese impurity in β-ZnP₂ by Kakazej, M., Kudin, A., Pinkovs’ka, M., Tartachnyk, V.

Peculiarities of optical absorption near-edge in irradiated GaP:Te by Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.

Influence of complex defects on electrophysical properties of GaP light emitting diodes by Konoreva, O., Malyj, E., Mamykin, S., Petrenko, I., Pinkovska, M., Tartachnyk, V.

Peculiarities of neutron irradiation influence on GaP light-emitting structures by Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.

Radiative recombination in initial and electron-irradiated GaP crystals by Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.

Radiation influence on characteristics of GaP light emitting diodes by Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.

Self-organization in irradiated semiconductor crystals caused by thermal annealing by Zavada, M., Konoreva, O., Lytovchenko, P., Opilat, V., Pinkovska, M., Radkevych, O., Tartachnyk, V.

Influence of structural defects on photoconductivity of zinc diphosphide by Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.

Ultrasound influence on exciton emission of GaP light diodes by Gontaruk, O.M., Khivrych, V.I., Pinkovska, M.B., Tartachnyk, V.P., Olikh, Ya.M., Vernydub, R.M., Opilat, V.Ya.

Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons by Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.

Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity by Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.

Low doses effect in GaP light-emitting diodes by Hontaruk, O.M., Konoreva, O.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Radkevych, O.I., Tartachnyk, V.P.

Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics by Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.

Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons by Vernydub, R.M., Kyrylenko, O.I., Konoreva, O.V., Olikh, Ya.M., Litovchenko, P.G., Pavlovskyy, Yu.V., Potera, P., Tartachnyk, V.P.

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