Харвестер відкритої науки НАН України

Influence of structural defects on photoconductivity of zinc diphosphide

за авторством Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Ultrasound influence on exciton emission of GaP light diodes

за авторством Gontaruk, O.M., Khivrych, V.I., Pinkovska, M.B., Tartachnyk, V.P., Olikh, Ya.M., Vernydub, R.M., Opilat, V.Ya.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Low doses effect in GaP light-emitting diodes

за авторством Hontaruk, O.M., Konoreva, O.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Radkevych, O.I., Tartachnyk, V.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons

за авторством Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity

за авторством Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics

за авторством Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)