Search Results - Yukhymchuk, V. O.
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Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy by Ponomaryov, S.S., Yukhymchuk, V.O., Valakh, M.Ya.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)Get full text
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Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum by Neimash, V.B., Poroshin, V.M., Shepeliavyi, P.Ye., Yukhymchuk, V.O., Melnyk, V.V., Makara, M.A., Kuzmich, A.G.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)Get full text
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Investigation of electron-phonon interaction in bulk and nanostructured semiconductors by Yaremko, A.M., Yukhymchuk, V.O., Dzhagan, V.M., Valakh, M.Ya., Azhniuk, Yu.M., Baran, J., Ratajczak, H., Drozd, M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)Get full text
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Raman spectroscopy
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Characterization and properties
раманiвська спектроскопiя
61.72.uj
73.40.Vz
78.30.Fs
81.07.Bc
81.40.Tv
AFM
Auger method
Czochralski technique
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Ga2S3–GeS2–Sb2S3 system
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IR materials
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Microstructure of thin composite films
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Raman scattering
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SERS substrates
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