2025-02-23T03:12:53-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-112376%22&qt=morelikethis&rows=5
2025-02-23T03:12:53-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-112376%22&qt=morelikethis&rows=5
2025-02-23T03:12:53-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T03:12:53-05:00 DEBUG: Deserialized SOLR response
The bias voltage and its influence on the etching rate of silicon

The bias voltage and its influence on the etching rate of silicon

The influence of the bias voltage on the silicon etching rate in the plasma-chemical reactor (PСR) with controlled magnetic fields have been investigated. The dependences of the silicon etching rate on the power, discharge current and on the pressure in the chamber PCR are obtained. It is found that...

Full description

Saved in:
Bibliographic Details
Main Authors: Fedorovich, О.А., Hladkovskiy, V.V., Polozov, B.P., Kruglenko, М.P.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2015
Series:Вопросы атомной науки и техники
Subjects:
Экспериментальные методы и обработка данных
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/112376
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

http://dspace.nbuv.gov.ua/handle/123456789/112376

Similar Items