2025-02-23T08:41:32-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-112376%22&qt=morelikethis&rows=5
2025-02-23T08:41:32-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-112376%22&qt=morelikethis&rows=5
2025-02-23T08:41:32-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T08:41:32-05:00 DEBUG: Deserialized SOLR response
The bias voltage and its influence on the etching rate of silicon

The bias voltage and its influence on the etching rate of silicon

The influence of the bias voltage on the silicon etching rate in the plasma-chemical reactor (PСR) with controlled magnetic fields have been investigated. The dependences of the silicon etching rate on the power, discharge current and on the pressure in the chamber PCR are obtained. It is found that...

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Bibliographic Details
Main Authors: Fedorovich, О.А., Hladkovskiy, V.V., Polozov, B.P., Kruglenko, М.P.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2015
Series:Вопросы атомной науки и техники
Subjects:
Экспериментальные методы и обработка данных
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/112376
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2025-02-23T08:41:32-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-112376%22&qt=morelikethis
2025-02-23T08:41:32-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-112376%22&qt=morelikethis
2025-02-23T08:41:32-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T08:41:32-05:00 DEBUG: Deserialized SOLR response

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