Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatments

• Видавець: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
• Дата: 1998
• Автори: Gorbach, T.Ya., Holiney, R.Yu., Matiyuk, I.M., Matveeva, L.A., Svechnikov, S.V., Venger, E.F.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/114672
• Цитувати: Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatments / T.Ya. Gorbach, R.Yu. Holiney, I.M. Matiyuk, L.A. Matveeva, S.V. Svechnikov, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 66-70. — Бібліогр.: 9 назв. — англ.

The effect of various pretreatments on the performance of microrelief (textured) Si wafers was studied by the techniques of low-field electroreflectance spectroscopy, scanning electron microscopy, and electron diffraction. Four types of preliminary treatments were employed to prepare microrelief surfaces by anisotropic chemical etching: (i) cutting, (ii) cutting and mechanical polishing with Al₂O₃, (iii) cutting and chemical polishing with HNO₃:HF, and (iv) the standard industrial technique. Using the critical point energy Eg at the central point in the Brillouin zone (GIV₂₅ – GC₁₅ transition) and the phenomenological parameter of broading G to characterize the performance of the Si surface, it was found that anisotropic chemical etching performed after cutting produced the surface performance comparable to that of industrially fabricated wafers, but at a lower cost.